高纯半绝缘SiC材料上缺陷的发光特性的研究  

Investigation of luminescence properties of defects in high-purity semi-insulating SiC materials

作　　者：林必波 靳思玥 秦璐[1,2] 任杰 许兴胜 LIN Bi-bo;JIN Si-yue;QIN Lu;REN Jie;XU Xing-sheng(State Key Laboratory of Optoelectronic Integration,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China;Center for Materials Science and Optoelectronic Engineering,University of Chinese Academy of Sciences)

机构地区：[1]中国科学院半导体研究所光电子集成国家重点实验室,北京100086 [2]中国科学院大学材料科学与光电工程中心

出　　处：《光电子．激光》2020年第1期1-7,共7页Journal of Optoelectronics·Laser

基　　金：新型单光子源器件的研究.

摘　　要：我们研究了采用电子辐照方法在高纯半绝缘4H-SiC材料表面上制备缺陷,获得了近似单个缺陷的发光特性。我们证明了碳化硅晶片上的缺陷的发光位于材料表面,而非材料内部。通过采用532nm激光泵浦碳化硅的表面,我们得到了一条波长在可见光范围内的光谱。通过设计两种不同电子能量的电子辐照、不同的电子辐照剂量以及退火时不同的氧含量,我们发现合理的电子辐照剂量和氧含量对高纯半绝缘4H-SiC材料的缺陷的产生以及发光特性将产生很大的影响,并得出了退火气体氛围中有氧气的成份将影响单个缺陷的形成和表面缺陷的发光强度的结论。有氧气的成份下,样品表面缺陷的发光强度低于退火时保护气体中无氧时的缺陷的发光强度,并且还会造成片上缺陷密度的增加。我们还分析了影响单个缺陷产生的主要因素与次要因素,以及影响缺陷发光稳定性原因的结论。这为在碳化硅材料上成功地制备出稳定可靠的量子器件提供了一个参考的价值。The fabrication of defects in high-purity semi-insulating 4 H-SiC materials by electron irradiation was studied,and the photoluminescence(PL)characteristics of approximate single defect was obtained.We demonstrated that the luminescence of defects on a silicon carbide wafer was on the surface of the material,not inside the material.The characteristic spectra signatures in the visible region by pumping the surface of the silicon carbide with a 532 nm laser was obtained.By designing electron irradiation of two different electron energies,different electron irradiation fluence and different oxygen contents during annealing in our study,we found that the reasonable electron irradiation fluence and the oxygen content significantly affected the fabrication of defects and the luminescence properties in high-purity semi-insulating 4 H-SiC materials.Simultaneously,the effect of oxygen content in annealing conditions on the formation of defects and luminescence properties of 4 H-SiC materials was paid close attention to.Finally,a conclusion was obtained that oxidation can affect the formation of single defect and the luminescence intensity of surface defects.Moreover,the main and secondary factors affecting the generation of single defect and the PL stability of the defects was discussed.A reference value for the successful fabrication of reliable and stable quantum devices on silicon carbide materials would be provided.

关 键 词：电子辐照 氧化 温度 缺陷 

分 类 号：TN383.2[电子电信—物理电子学]