添加Bi2WO6对ZnO基压敏陶瓷电学性能的影响  

Influence of Bi2WO6 on Electric Properties of Zn O Varistor Ceramics

作　　者：林文文 贺笑春 徐志军[1] 王子恒 初瑞清[1] LIN Wenwen;HE Xiaochun;XU Zhijun;WANG Ziheng;CHU Ruiqing(School of Environmental Materials and Engineering,Yantai University,Yantai 264005,China)

机构地区：[1]烟台大学环境与材料工程学院,烟台264005

出　　处：《材料研究学报》2020年第4期285-290,共6页Chinese Journal of Materials Research

基　　金：国家重点研发计划(2016YFB0402701);山东省重点研发计划(GG201809190252);山东省自然科学基金(ZR2016EMM02)。

摘　　要：用传统固相反应法研究了添加Bi2WO6(x=0%~9%,质量分数)对ZnO基压敏陶瓷的微观结构、压敏性能和介电性能的影响。结果表明:掺入适量的Bi2WO6能促进ZnO压敏陶瓷晶粒均匀生长、提高微观结构的均匀性、降低压敏场强和提高非线性系数;同时,Bi2WO6的添加可提高ZnO晶粒表面吸附氧的含量,从而提高界面态密度和势垒高度以及ZnO基压敏陶瓷的非线性特性。Bi2WO6的添加量为7%的ZnO基压敏陶瓷,其综合性能为:E1 mA=263 V/mm,a=53,JL=3.50μA/cm2,jb=11.52 eV。The ZnO-based varistor ceramics with addition of different amount of Bi2 WO6 were prepared by conventional solid state reaction and then their surface morphology and electrical properties were examined. Results show that appropriate Bi2 WO6-dopping can promote the uniform growth of ZnO varistor ceramic grains, improve their uniformity of microstructure, reduce the breakdown voltage and increase the nonlinear coefficient. In addition, Bi2 WO6 can increase the content of absorbed oxygen on the surface of ZnO, thereby enhance the density of the interfacial state and barrier height, correspondingly,optimize the nonlinear characteristic of ZnO varistor ceramics. For the ZnO-based varistor ceramics with x=7%(mass fraction) Bi2 WO6, presents excellent properties: the nonlinear coefficient α is as high as 53,corresponding to the highly barrier height jbof 11.52 eV, whilst the leakage current JLand the breakdown voltage are as low as 3.50 μA/cm2 and 263 V/mm, respectively.

关 键 词：无机非金属材料 ZnO基压敏陶瓷 Bi2WO6 微观结构 电学性能 

分 类 号：TB321[一般工业技术—材料科学与工程]