CaZrO3薄膜的微观结构与介电性能研究  

Research on the Microstructure and Dielectric Properties of CaZrO3 Thin Film

作　　者：谢斌 余萍[1] Xie Bin;Yu Ping(College of Materials Science and Engineering Sichuan University,Chengdu 610064,China)

机构地区：[1]四川大学材料科学与工程学院,四川成都610064

出　　处：《广东化工》2020年第7期4-6,共3页Guangdong Chemical Industry

基　　金：高比电容薄膜型集成式电容器材料及关键技术研究,No.u1601208。

摘　　要：采用射频磁控溅射技术在Pt/Ti/SiO2/Si衬底上制备了单一钙钛矿结构的CaZrO3薄膜。研究了CaZrO3薄膜的介电性能和微观形貌,利用X射线衍射技术和扫描电子显微镜技术对所制备薄膜的微观结构进行了表征,并对所制备薄膜的介电性能进行了系统测试,侧重讨论了制备工艺参数O2:Ar比对所制备薄膜的物相及电学性能的影响。研究结果表明,O2:Ar比对所制备薄膜的相纯度有显著影响,在O2:Ar比为10:40和20:40时获得单一钙钛矿相的CaZrO3薄膜,O2:Ar比为30:40和40:40时,薄膜中可观察到第二相Ca0.2Zr0.8O1.8(CSZ)杂相。O2:Ar比为10:40条件下所制备的单一钙钛矿相CaZrO3薄膜在1MHz介电常数约为30,介电损耗为0.006,并且该薄膜在40 V直流电压下,漏电流密度为5×107 A/cm2。单一钙钛矿相的CaZrO3薄膜在薄膜型电容器和微波器件方面具有潜在应用。CaZrO3 thin films were deposited on Pt/Ti/SiO2/Si substrates at 550℃by using radio-frequency magnetron sputtering technology.The microstructures and dielectric properties of the prepared CaZrO3 thin films were investigated experimentally.The microstructures of the prepared thin films were characterized by X-ray diffraction technology and scanning electron microscope technology.The effects of O2:Ar ratios on the microstructures and electrical properties of the thin films were studied.The films prepared under the flow O2:Ar ratio of 10:40 and 20:40 show the pure perovskite crystal phase of CaZrO3.A small amount of Ca0.2Zr0.8O1.8 was confirmed in the films prepared at 30:40 and 40:40 in O2:Ar ratio.The as-prepared pure perovskite crystal phase CaZrO3 film showsεr^30,tanδ~0.006 at 1 MHz and a leakage current density of 5×10-7 A/cm2 at the DC voltage of 40 V.It should be a promising material in the application of thin film capacitor and microwave elements.

关 键 词：CaZrO3薄膜 射频磁控溅射 O2:Ar流量比 介电性能 漏电流密度 

分 类 号：TQ[化学工程]