室温核辐射探测器用碲锌镉晶体生长研究进展  

Research Progress on CdZnTe Crystal Growth for Room Temperature Radiation Detection Applications

作　　者：杨帆[1] 王涛[1] 周伯儒[1] 席守智 查钢强[1] 介万奇[1] YANG Fan;WANG Tao;ZHOU Boru;XI Shouzhi;ZHA Gangqiang;JIE Wanqi(State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi’an 710072,China;Imdetek Corp.Ltd.,Xi’an 712000,China)

机构地区：[1]西北工业大学,凝固技术国家重点实验室,西安710072 [2]陕西迪泰克新材料有限公司,西安712000

出　　处：《人工晶体学报》2020年第4期561-569,共9页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2016YFB0402405);国家自然科学基金(51672116)。

摘　　要：碲锌镉(CdZnTe,CZT)晶体被认为是目前最有前途的室温半导体探测器材料之一,基于该晶体的探测器件具有能量分辨率高、体积小、便携等优点。而大面积CZT像素探测器的快速发展以及对高能、大剂量X射线探测的需求,对CZT材料的质量和尺寸提出了更高的要求。本文从CZT晶体的基本物性参数入手,探讨了大尺寸CZT晶体生长的影响因素,对两种主要的CZT生长方法——布里奇曼法和移动加热器法的研究进展进行了综述。CdZnTe(CZT)crystal has been considered as one of the most promising materials for room temperature semiconductor detector,with the advantages of high energy resolution,small volume and portability.With the rapid development of large-area CZT pixel detectors and the demand for high-energy and high-flux X-ray detection,higher requirements are put forward for the quality and size of CZT materials.In this paper,based from the basic physical properties of CZT crystal,the factors influencing the growth of large size CZT crystal were discussed.The research progress of two main CZT growth methods,Bridgman method and Travelling Heater method(THM)were summarized.

关 键 词：核辐射探测 碲锌镉晶体 布里奇曼法 移动加热器法 

分 类 号：O734[理学—晶体学]