GaN功率器件栅驱动电路技术综述  

Overview of GaN Power Device Gate Driving Circuit Technology

作　　者：冯旭东 胡黎 张宣[1] 明鑫[1] 周琦[1] 张波[1] FENG Xudong;HU Li;ZHANG Xuan;MING Xin;ZHOU Qi;ZHANG Bo(Power Integration Technology Lab,University of Electronic Science and Technology of China,Chengdu610054,P.R.China)

机构地区：[1]电子科技大学功率集成技术实验室,成都610054

出　　处：《微电子学》2020年第2期207-213,共7页Microelectronics

基　　金：国家重点研发计划资助项目(2017YFB0402800)。

摘　　要：第三代宽禁带半导体GaN晶体管具有低导通阻抗、低寄生参数和更快的开关速度,有望取代传统Si MOSFET,成为未来高性能电源系统实现方案。GaN器件的优势在400 V以上高压系统中更为明显,可以实现更高的开关频率和功率密度,显著提高系统的转换效率,特别适合电源模块小型化发展趋势。介绍了200 V以下低压GaN驱动电路的应用和关键技术。分析了从低压系统拓展到400 V以上高压系统时需要作出的优化与改进。详细介绍了高压GaN系统中基于无磁芯变压器耦合隔离的隔离驱动技术和耗尽型GaN负压栅驱动技术。最后,总结了目前高压GaN驱动电路在工业领域的具体应用。The third generation wide bandgap semiconductor GaN transistors are expected to replace the traditional Si MOSFET as the high performance power system implementation in the future because of it’s low on-resistance, less parasitic parameter and high switch speed. The advantages of GaN devices are more obvious in high voltage(HV) system over 400 V. GaN devices can achieve higher switching frequency and power density, significantly improve the HV system efficiency, and are especially suitable for the trend of miniaturization of power supply modules. The applications and key technologies of low voltage GaN system under 200 V were introduced firstly, then the optimizations in HV system were analyzed. In view of the applications of HV system, the isolated drive technology based on the coupling isolation of coreless transformer and the d-mode GaN negative voltage gate drive scheme were introduced in detail. Finally, the applications of HV GaN systems in industry were summarized.

关 键 词：低压GaN驱动 高压GaN驱动 无磁芯变压器隔离 耗尽型GaN 负压栅驱动 

分 类 号：TN323.4[电子电信—物理电子学]