热光源和稳恒磁场对石墨烯阻值的影响  

Effect of Thermal Light Source and Homogenous Magnetic Field on Graphene Resistance

作　　者：李龙飞 胡加杨 李方清 王德波 LI Longfei;HU Jiayang;LI Fangqing;WANG Debo(College of Electronic and Optical Engineering&College of Microelectronics,Nanjing University of Posts and Telecommunications,Nanjing 210023,P.R.China)

机构地区：[1]南京邮电大学电子与光学工程学院、微电子学院,南京210023

出　　处：《微电子学》2020年第2期253-256,共4页Microelectronics

基　　金：国家青年自然科学基金资助项目(61704086);中国博士后科学基金资助项目(2017M621692);江苏省博士后基金资助项目(1701131B);南京邮电大学国自基金孵化资助项目(NY215139,NY217039);南京大学近代声学教育部重点实验室开放课题(1704)资助项目。

摘　　要：研究了热光源和稳恒磁场对石墨烯阻值的影响。首先分析了光致吸附作用,利用Drude形式,建立了温度与阻值之间的关系。然后利用哈伯德模型和微扰理论,找到稳恒磁场中石墨烯从金属态到绝缘态的临界相变条件。实验结果表明,热光源的光功率从0增加到0.88 mW时,石墨烯的阻值从38.44Ω减小到33.48Ω。稳恒磁场从0增加到122.70 mT时,石墨烯阻值从38.44Ω增加到44.24Ω。实验结果证明了磁场强度与石墨烯阻值之间有着良好的线性关系。这对于石墨烯在导电涂层、抗腐蚀涂层和锂离子电池领域的应用具有一定的指导意义。The effect of thermal light source and homogenous magnetic field on graphene resistance were studied.The photo-induced adsorption was first analyzed.Then the Drude form was used to establish the relationship between the temperature and the resistance.The critical phase transition condition of graphene from metallic state to insulation state in homogenous magnetic field was confirmed by using Hubbard model and perturbation theory.Experimental results showed that the resistance of graphene decreased from 38.44Ωto 33.48Ωin the thermal light power range from 0 to 0.88 mW.In the homogenous magnetic field,the resistance of graphene increased from 38.44Ωto 44.24Ωin the magnetic intensity range from 0 to 122.70 mT,which proved that there was a good linear relationship between the magnetic field strength and the graphene resistance.The study had certain guiding significance for graphene in the field of conductive coating,anti-corrosion coating and lithium ion battery.

关 键 词：哈伯德模型 量子霍尔效应 光致吸附作用 石墨烯 

分 类 号：TN304.18[电子电信—物理电子学]