横向电阻区对IGBT过电流关断能力的影响研究  

Study on the Influence of Lateral Resistance Region on the IGBT Overcurrent Turn-Off Capability

作　　者：纪丙华 吴郁 金锐 JI Binghua;WU Yu;JIN Rui(Faculty of Information Technology,Beijing University of Technology,Beijing 100124,P.R.China;Shanghai Aerospace Electronic Technology Institute,Shanghai 201109,P.R.China;State Key Lab of Advanced Power Transmission Technology,Global Energy Interconnection Research Institute,Beijing 100192,P.R.China)

机构地区：[1]北京工业大学信息学部,北京100124 [2]上海航天电子技术研究所,上海201109 [3]全球能源互联网研究院先进输电技术国家重点实验室,北京100192

出　　处：《微电子学》2020年第2期262-266,271,共6页Microelectronics

基　　金：国家重点研发计划项目(2016YFB0901800)。

摘　　要：针对绝缘栅双极晶体管(IGBT)在过电流关断测试中被烧毁的问题,设计了三种不同的横向电阻区结构。为了分析器件的失效机理,研究不同结构横向电阻区对过电流关断能力的影响,借助Sentaurus TCAD仿真工具构建了器件模型,模拟了器件的整个过电流关断过程。对三种结构器件在过电流关断过程中的内部关键物理参量的变化情况进行分析,发现不同长度的横向电阻区对空穴的抽取效率不同,进而可以影响到电流密度分布。当电阻区增加到一定长度时,可以有效提升过电流关断能力,避免器件烧毁失效。Three different lateral resistance region structures were designed for the problem of burning failures of insulated gate bipolar transistors(IGBT) in the overcurrent turn-off test. To analyze its failure mechanism and study the influence of different lateral resistance regions on the overcurrent turn-off capability, device models of IGBT were established and overcurrent turn-off processes were simulated by using Sentaurus TCAD tools. The results showed that lateral resistance regions of different lengths had an affect on hole extraction efficiencies and current density distributions by comparison and analysis. When the length of the lateral resistance region increased to a certain value, the overcurrent turn-off capability of the device could be greatly improved, and the burning failure could be avoided.

关 键 词：IGBT 过电流关断 烧毁失效 横向电阻区 

分 类 号：TN323.4[电子电信—物理电子学]