磁场作用下冷热探针测硅片的载流子浓度  

Experiment research of measurement for semiconductor Si electric doping concentration by thermo-needles in magnetic fields

作　　者：刘岩枫 赵雨 Liu Yanfeng;Zhao Yu(Mathematic&Physics department of Shanghai Electric Power University,Shanghai,201300)

机构地区：[1]上海电力大学数理系,上海201300

出　　处：《电子测试》2020年第10期52-53,62,共3页Electronic Test

基　　金：上海市大学生科技创新项目。

摘　　要：制作并改进了传统的冷热探针测半导体导电类型的实验装置,即使传统冷热探针原来固定的温度差改进为数值可变的量,做出了p、n型硅半导体样品的温差电动势随冷热探针温度差的变化关系。发现温差小于120℃时温差电动势与温差成正比,进而提出了一种测半导体掺杂浓度的实验测量方法。把装置处于磁场作用下,发现基于硅片的冷热探针产生的温差电动势有所增加。Experiment measurement always needs complicated and expensive instruments.Traditional thermo-needles measurement equipment was made and improved for distinction of semiconductor Si’s electric conduction type.The previous constant temperature was improved to be variable.The dependence of thermoelectromotive force on teperature contrast was graphed.The results showed that when temperature is below 120℃,thermoelectromotive force is proportional to temperature contrast.The related theoretical analysis was presented.Finally,it was found that thermoelectromotive force improved when the experiment measurement equipment was put in magnetic fields.

关 键 词：温差电动势 导电类型 掺杂浓度 磁场 

分 类 号：TN304[电子电信—物理电子学]