利用离子激发发光研究ZnO离子注入和退火处理的缺陷变化  

Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing

作　　者：罗长维 仇猛淋 王广甫[1,2] 王庭顺 赵国强 华青松 Luo Chang-Wei;Qiu Meng-Lin;Wang Guang-Fu;Wang Ting-Shun;Zhao Guo-Qiang;Hua Qing-Song(Key Laboratory of Beam Technology of Ministry of Education,College of Nuclear Science and Technology,Beijing Normal University,Beijing 100875,China;Beijing Radiation Center,Beijing 100875,China)

机构地区：[1]北京师范大学核科学与技术学院,射线束教育部重点实验室,北京100875 [2]北京市辐射中心,北京100875

出　　处：《物理学报》2020年第10期83-88,共6页Acta Physica Sinica

基　　金：国家自然科学基金青年科学基金(批准号:11905010);中央高校基本科研业务费专项资金(批准号:2018NTST04);中国博士后科学基金(批准号:2019M650526)资助的课题.

摘　　要：在北京师范大学GIC41172×1.7 MV串列加速器上,利用离子激发发光(ions beam induced luminescence,IBIL)技术研究了2 MeV H^+注入ZnO的缺陷变化及473和800 K退火处理对缺陷的恢复作用.实验表明,在2 MeV H^+的辐照下,晶体内部产生的点缺陷会快速移动、聚集成团簇,从而抑制发光.473 K退火后的受辐照ZnO晶体内仍存在着大量的缺陷和团簇,而这些缺陷和团簇作为非辐射中心抑制着ZnO晶体的发光.800 K的退火处理可以显著地分解辐照过程中形成的团簇,也可以帮助点缺陷回到晶格位置,从而减少晶体内部的不平衡缺陷,提高晶体的结晶度,使退火后的受辐照ZnO样品IBIL光强大幅度增强.The optical and electrical properties of ZnO related on the type and the concentration of defects in ZnO crystal.Ion implantation and annealing can change the type and the concentration of defects in ZnO.To understand the variation of defects in ZnO during ion implantation and after different temperature annealing,in situ luminescence measurements of ZnO crystal samples were carried out by ion beam induced luminescence(IBIL) during ion implantation of 2 MeV H+and then after annealing at 473 K and 800 K in vacuum on the GIC4117 tandem accelerator in Beijing Normal University.IBIL spectra of ZnO showtwo emission peaks:UV emission,which is called near band emission(NBE),and visible emission,which is called deep band emission(DBE).The high-intensity of DBE and weak NBE of IBIL spectra of ZnOmay be due to the NBE is intrinsic to ZnO samples and therefore is just visibly observed from samples that are virtually defect-free.With the ion implantation,the destruction of the crystal structure and the arising of a mass of defects,inducing the weak intensity NBE and intense DBE.In addition,the overall IBIL spectra of ZnOreveal decrease intensity with the ion fluence,which indicates that the concentration of luminescence centersdecreases duringion imp lant at ion.Wit h the H+fluence,the concentration of the point defects increases.The point defects migrate and subsequently agglomerate into larger defect clusters.These defect clusters serve as traps for catching electrons and holes,which result in the quenching of luminescence centres.Annealing can help todecompose the defect clusters and repair the defects of crystal.However,amounts of defects and clusters still remain in the irradiated sample annealed at 473 K in vacuum,which acted as nonradiative center and suppress the luminescence induced weak intensity of IBIL.Annealing the sample at800 K in vacuum may facilitate the decomposition of defect clusters during ion irradiation to point defects and the point defect return to the lattice position that can reduce the nonequilibr

关 键 词：离子激发发光 退火 ZNO 

分 类 号：TL503.3[核科学技术—核技术及应用]