中间层厚度对具有隧穿结构的叠层电池的影响  

Effect of interlayer thickness on tandem cells with tunneling structure

作　　者：靳果[1] 王记昌[1] 孟阳[2] JIN Guo;WANG Ji-chang;MENG Yang(College of Mechanical and Electrical Automation,Henan Polytechnic Institute,Nanyang Henan 473000,China;Xi'an Jiaotong University,Xi'an Shaanxi 710000,China)

机构地区：[1]河南工业职业技术学院机电自动化学院,河南南阳473000 [2]西安交通大学,陕西西安710000

出　　处：《电源技术》2020年第5期706-709,770,共5页Chinese Journal of Power Sources

基　　金：河南省科技发展计划(132102210456);2019年南阳市科技计划项目(KJGG078)。

摘　　要：为了提高非晶硅/微晶硅叠层电池的转换效率和稳定性,在隧穿结构中引入ZnO∶B中间层,研究了中间层厚度对叠层电池短路电流密度、开路电压、转换效率等性能的影响。实验结果表明,较薄的中间层厚度,可以优化顶电池和底电池的短路电流密度,使微晶硅底电池生长致密,提高叠层电池的开路电压。采用厚度为60 nm的中间层,并优化顶电池和底电池的厚度后,制备出了初始转换效率为11.5%、衰退率在9%以内的叠层电池。In order to improve the conversion efficiency and stability of amorphous silicon/microcrystalline silicon tandem batteries,ZnO∶B interlayer was added to the tunneling structure,and the effects of interlayer thickness on the short circuit current density,open circuit voltage and conversion efficiency were studied.The experimental results show that the thinner interlayer thickness can optimize the short circuit current density of top cell and bottom cell,and make microcrystalline silicon bottom cell grow densely to improve the open circuit voltage of the tandem cell.Finally,the optimized tandem cells with an initial efficiency of 11.5%and a decay rate of less than 9%were fabricated by using a 60-nm-thick interlayer and optimizing the thickness of top and bottom cells.

关 键 词：ZnO∶B 中间层 非晶硅/微晶硅叠层电池 

分 类 号：TM914[电气工程—电力电子与电力传动]