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作 者:徐亚新[1] 赵飞[1] 何超 龚孟磊 庄治学 梁广华[1] XU Yaxin;ZHAO Fei;HE Chao;GONG Menglei;ZHUANG Zhixue;LIANG Guanghua(The 54th Research Institute of CETC,Shijiazhuang 050081,China)
机构地区:[1]中国电子科技集团公司第五十四研究所,河北石家庄050081
出 处:《电子工艺技术》2020年第2期99-102,共4页Electronics Process Technology
摘 要:采用氮化铝基板进行功率负载制备,可满足通信系统对高散热的要求。针对氮化铝基板耐碱性差和易水解性等特性,从工艺流程入手,对影响器件长期可靠性的互连孔制备、膜层附着力提高等关键技术和重要因素进行了分析。研制的氮化铝基功率负载在0~40 GHz频段内,经过国军标可靠性试验后性能保持稳定,耐受功率达30 W,实现了高可靠性高功率负载的制备。To meet the requirement of heat dissipation for the communication system,a power load is processed by AlN substrate.According to the characteristics of AlN substrate,such as poor alkali resistance and easy hydrolysis,the key technologies and the important factors,including the preparation of the interconnected via and the adhesion of fi lm,which affect the reliability of devices,are analyzed from the perspective of technological process.The reliability of the proposed power load based on AlN substrate is measured according to the military standard.Measured results indicate that,the performance of the proposed device can be maintained steadily from 0 to 40 GHz,and the withstand power is up to 30 W.The processing of power load with high reliability and high power is realized.
分 类 号:TN605[电子电信—电路与系统]
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