T型三电平IGBT驱动的优化设计与测试  

Optimum Design and Testing of T-type Three-level IGBT Driver

作　　者：梁帅奇[1,2] 王小红 侯凯[1,2] 吴林平 LIANG Shuai-qi;WANG Xiao-hong;HOU Kai;WU Lin-ping(NARI Technology Development Co.,Ltd.,Nanjing 211006,China)

机构地区：[1]国电南瑞科技股份有限公司,江苏南京211006 [2]国电南瑞南京控制系统有限公司,江苏南京211006

出　　处：《电力电子技术》2020年第3期130-133,137,共5页Power Electronics

摘　　要：针对所研制的T型三电平绝缘栅双极型晶闸管(IGBT)驱动装置,研究了门极驱动电阻的计算、模块寄生参数的测算及寄生参数对测试结果的影响,进一步研究了双脉冲测试中尖峰电压不对称的原因并提出解决途径。在双脉冲测试平台上,通过测试IGBT模块接线端子间的电压及流过它们的电流在第二个脉冲关断时刻的波形,利用测定的电压峰值和电流变化率,计算出IGBT模块内部寄生的杂散电感大小。结果表明,双脉冲测试中尖峰电压不对称的现象是由IGBT模块内部引线造成的杂散电感严重不对称造成的。此处介绍的测试方法为检测驱动装置、调整驱动参数和优化测试结果提供了良好的依据。For the T-type three-level insulated gate bipolar translator(IGBT) drive device,the calculation of gate resistance,the measurement of module parasitic parameters and the influence of parasitic parameters on test results are studied.The causes of asymmetry of peak voltage in double-pulse test are studied and the solutions are proposed.On the double-pulse test platform,by measuring the voltage between terminals of IGBT module and the current flowing through them at the second pulse turn-off time,and the measured voltage peak value and current change rate,the parasitic stray inductance of IGBT module is calculated and the equivalent circuit is drawn.The results show that the asymmetry of peak voltage in double-pulse test is caused by the serious asymmetry of stray inductance caused by the internal lead of IGBT module.The test method introduced here provides a valuable basis for testing the driving device,adjusting the driving parameters and optimizing the test results.

关 键 词：绝缘栅双极型晶闸管 门极电阻 尖峰电压 

分 类 号：TN34[电子电信—物理电子学]