SiC MPS二极管反向特性模型  

Reverse Characteristic Model of SiC MPS Diode

作　　者：杜启雯 陶雪慧[1] DU Qi-wen;TAO Xue-hui(Soochow University,Suzhou 215000,China)

机构地区：[1]苏州大学,江苏苏州215000

出　　处：《电力电子技术》2020年第3期138-140,共3页Power Electronics

基　　金：国家自然科学基金(51307113)。

摘　　要：研究了合并PiN/肖特基(MPS)二极管的结构参数、外加电压及温度对MPS二极管反向漏电流的影响,为MPS二极管开发了一种新的分析模型,该模型可用于分析及预测MPS二极管的反向特性。该模型通过二维泊松方程近似求解了MPS二极管表面电场的模型,并基于表面电场模型依次从热电子发射电流、隧道电流、耗尽层电流及扩散电流4个部分分析并求解MPS二极管的反向漏电流模型。经验证模型结果和实验结果表现出较好的一致性。The effects of applied structural parameters,voltage and temperature of merged PiN/Schottky(MPS)diode on the reverse leakage current of these diodes are studied.A new analytical model for MPS diode is also developed to analyse and predict the reverse characteristic of these diodes.The model of the surface electric field is approximately solved by using the 2-dimensional Poisson equation.The reverse leakage current model of MPS diode is analysed and solved from the four parts of thermionic emission current,tunnel current,depletion layer current and diffusion current which based on the surface electric field model.The validated model and experimental results show good agreement.

关 键 词：二极管 反向特性 表面电场 

分 类 号：TN3[电子电信—物理电子学]