一种面向电磁集成单元的寄生电容吸收过程  

An Absorption Process of Parasitic Capacitance Oriented to Electromagnetic Integrated Units

作　　者：吴翼[1] 邓成[1] WU Yi;DENG Cheng(Xiangtan University,Xiangtan 411105,China)

机构地区：[1]湘潭大学,湖南湘潭411105

出　　处：《电力电子技术》2020年第2期39-42,共4页Power Electronics

基　　金：国家自然科学基金(51577161)。

摘　　要：柔性多层带材(FMLF)集成技术是近年来提高开关电源功率密度的一种热门解决方案。然而,其寄生电容或电感不仅会造成严重的电磁干扰(EMI),还影响高频滤波特性。首先提出了一种集成一个感性元件和两个容性元件的新型FMLF;接着,利用电磁分布参数(DEMC)模型分步推理了由绝缘薄膜形成的寄生电容被电介质薄膜吸收的过程;然后,展示了这种新型FMLF的一个实际应用;最后在一台350 W Boost串联谐振变流器实验平台上证明了所提新型FMLF的正确性和实用性。In recent years,flexible multi-layer foil(FMLF) integrated technique has become a popular solution to improve the power density.However,the parasitic capacitor or inductor not only can produce the serious electromagnetic interference(EMI),but also will influence high frequency filtering characteristic.A novel FMLF is proposed firstly which can integrate one inductive and two capacitive components.Secondly,an absorption process of the parasitic capacitance which is formed by the insulation film is derived step by step based on distributed electromagnetic component(DEMC) model.Thirdly,an actual application for the novel FMLF is demonstrated.Finally,the correctness and practicality of the proposed novel FMLF are verified on a 350 W Boost series resonant test platform.

关 键 词：电磁 柔性多层带材 电磁分布参数 集成技术 

分 类 号：O441[理学—电磁学]