功率回路杂散电感对IGBT并联均流的影响  

Effect of Stray Inductance in Power Circuit on Parallel Current Sharing of High-power IGBT Modules

作　　者：王磊[1] 罗毅飞[1] 马天兆 贾英杰 WANG Lei;LUO Yi-fei;MA Tian-zhao;JIA Ying-jie(National Key Laboratory of Science and Technology on Vessel Integrated Power System,Naval University of Engineeringy Wuhan 430033,China)

机构地区：[1]海军工程大学,舰船综合电力国防科技重点实验室,湖北武汉430033

出　　处：《电力电子技术》2020年第4期33-35,共3页Power Electronics

基　　金：国家自然科学基金重大项目(51490681);国家重点基础研究发展计划(973计划)(2015CB251004)。

摘　　要：母排设计时,为了减小绝缘栅双极型晶体管(IGBT)的关断瞬态电压尖峰,通常会将功率回路杂散电感设计的尽可能小,但回路杂散电感的大小也会对IGBT的并联动态均流产生影响。针对此问题,首先建立了功率回路杂散电感影响不均流度的数学模型,找到不均流的影响因素;然后,以IGBT物理模型结合Simulink仿真平台分析了回路杂散电感对并联均流的影响趋势;最终,通过双脉冲测试进行了验证,结果表明在该测试平台中,回路杂散电感减小2倍,最大会增加约10%的不均流度。To reduce the turn-off transient voltage spike of insulated gate bipolar transistor(IGBT),the power circuit stray inductance is usually designed to be as small as possible.However,the stray inductance also affects the parallel current sharing of IGBT.Aiming at this problem,the mathematical model for imbalanced current is established firstly and the influencing factors of imbalanced current are found.Then,the influence trend of stray inductance in power circuit on the parallel current sharing is analyzed by IGBT physical model combined with Simulink platform.Finally,it is verified by double pulse test.The results show that when the stray inductance in power circuit is reduced by 2 times,the maximum imbalanced current is increased by 10%.

关 键 词：绝缘栅双极型晶体管 杂散电感 并联均流 

分 类 号：TN32[电子电信—物理电子学]