电极结构与空间布置对压接型IGBT器件内部多芯片并联均流的影响(一):计算研究  

Influence of Electrode Structure and Arrangement on Current Sharing Performance Inside a Multi-chip Press-pack IGBT Device(Part I):Analysis and Calculation

作　　者：顾妙松 崔翔 彭程 唐新灵 杨艺烜 李学宝 赵志斌 GU Miaosong;CUI Xiang;PENG Cheng;TANG Xinling;YANG Yixuan;LI Xuebao;ZHAO Zhibin(State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China;State Grid Smart Grid Research Institute,Changping District,Beijing 102209,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206 [2]全球能源互联网研究院,北京市昌平区102209

出　　处：《中国电机工程学报》2020年第7期2318-2329,共12页Proceedings of the CSEE

基　　金：国家自然科学基金-国家电网公司联合基金重点项目(U1766219);中央高校基本科研业务费专项资金(JB2018096)。

摘　　要：该文从理论分析与建模计算2个方面研究电极结构与空间布置对压接型IGBT器件内部多芯片并联均流的影响。首先,从理论上分析电极结构对IGBT芯片和FRD芯片的并联均流特性的影响机理,并比较主动和被动均流模式下影响机理的差异。进而详细对比分析了时域等效电路方法与频域有限元方法的特点与优势。最后,在被动注入模式下计算4种典型结构下器件内部的动态均流特性。计算结果表明:发射极电极圆周化布置,在对称的外部电磁条件下可以明显优化器件内部的并联均流特性。但是当器件连接外部不对称汇流母排后,该布置方案收效甚微,甚至有加剧不均流的风险;发射极电极刻槽,在对称或者不对称的外部电磁条件下,都能对器件内部的动态均流特性加以改善。In this paper,the effects of the electrode structure and spatial arrangement on current sharing performance in multi-chip press-pack IGBT devices were studied from theoretical analysis and calculation.Firstly,the mechanism of the electrode structure on the current sharing characteristics of the IGBT/FRD chips was theoretically analyzed,and the difference in the active and passive current sharing modes was compared.Furthermore,the features and advantages of the equivalent circuit method in the time domain and the finite element method in the frequency domain were comparatively analyzed in detail.Finally,the dynamic current sharing characteristics of devices with four typical electrode structures were calculated in passive injection mode.The calculation results show that the emitter electrode circumferential arrangement schemes can significantly optimize the parallel current sharing characteristics inside the device under symmetrical external electromagnetic conditions.But it is difficult to improve the current balance after the device is connected to an external asymmetric bus bar,with the risk of increasing current imbalance.The emitter electrode groove schemes can improve the dynamic current sharing balance of the devices both in symmetric or asymmetrical external electromagnetic conditions.

关 键 词：压接型IGBT 并联均流 汇流母排 涡流场计算 

分 类 号：TN322.8[电子电信—物理电子学]