TDI图像传感器横向抗晕栅极电压与满阱容量关系研究  

Relationship between Voltage of Lateral Anti-blooming Gate and Full Well Capacity in TDI Image Sensor

作　　者：曲杨 王欣洋[1,2] 周泉 常玉春 QU Yang;WANG Xinyang;ZHOU Quan;CHANG Yuchun(Changchun Institute of Optics,Fine Mechanics and Physics of the Chinese Academy of Sciences,Changchun 130033,CHN;University of Chinese Academy of Sciences,Beijing 100049,CHN;Gpixel.Incorporation,Changchun 130033,CHN;School of Microelectronics,Dalian University of Technology,Dalian 116600,CHN)

机构地区：[1]中国科学院长春光学精密机械与物理研究所,长春130033 [2]中国科学院大学,北京100049 [3]长光辰芯光电技术有限公司,长春130033 [4]大连理工大学微电子学院,大连116600

出　　处：《半导体光电》2020年第2期169-172,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(11975066).

摘　　要：时间延时积分CMOS图像传感器(TDI-CIS)具有优良的微光探测能力,可应用于航空探测及卫星遥感等领域。然而,在入射光强较强时,TDI-CIS容易出现光晕(Blooming)现象,影响观测效果。首先分析了光晕产生的机理;然后基于两种传统的抗晕结构,设计出一种具有沿垂直方向布局的长方形横向抗晕栅的TDI-CIS;通过成像实验发现横向抗晕栅极电压与抗晕效果及满阱容量(FWC)之间呈负相关关系;最后通过实验得到所设计TDI-CIS的最优抗晕栅极电压值为2.1V。Due to its excellent detection ability under low light illumination,time delay integration CMOS image sensor(TDI-CIS)can be applied in aviation detection and satellite remote sensing.However,it is easy to appear blooming phenomenon to affect observation when TDI-CIS is under higher intensity illumination.In this paper,the mechanism of blooming is introduced firstly and a TDI-CIS with rectangle lateral anti-blooming gate which is arranged in vertical direction based on two different anti-blooming structures is designed.Imaging tests indicate that the voltage of anti-blooming gate(VABG)is negatively corrected with anti-blooming and full well capacity(FWC).Finally,the optimal VABGof 2.1 Vis obtained.

关 键 词：时间延时积分 CMOS 光晕 横向抗晕栅 满阱容量 

分 类 号：TN386.1[电子电信—物理电子学]