热压温度对Gd掺杂N型赝三元半导体材料热电性能的影响  

Effect of Hot Pressing Temperature on the Thermoelectric Properties of Gd Doped N-type Pseudo-ternary Semiconductor Materials

作　　者：刘佳音 潘春光 王月媛[1] 胡建民[1] Liu Jiayin;Pan Chunguang;Wang Yueyuan;Hu Jianmin(Harbin Normal University)

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2020年第1期58-61,共4页Natural Science Journal of Harbin Normal University

摘　　要：采用机械合金化热压法制备N型Gd掺杂赝三元热电材料,XRD、SEM和霍尔效应测试结果表明,热压温度的升高有利于晶粒的聚集和生长;热电性能测试结果表明,随着热压温度的升高,Seebeck系数略有减小,电导率和热导率都逐渐增大.Gd的掺杂浓度为0.5 wt%、热压温度为200℃、压力为550 MPa条件下制备的N型Gd掺杂赝三元热电材料热电优值为2.11×10^-3 K^-1.In this paper, the N-type Gd-doped pseudo-ternary thermoelectric materials is prepared by the mechanical alloying hot-pressing method. Its performance is tested by XRD, SEM and Hall effect. The results show that the increasing of the hot pressing temperature is beneficial to the aggregation and growth of grains. The thermoelectric performance test results show that the Seebeck coefficient decreases slightly with increasing hot pressing temperature, and both the electrical conductivity and thermal conductivity increase gradually. The thermoelectric merit of the N-type Gd-doped pseudo-ternary thermoelectric material prepared at a doping concentration of 0.5 wt%, a hot pressing temperature of 200℃, and a hot pressing pressure of 550 MPa is 2.11×10^-3 K^-1.

关 键 词：GD掺杂 BI2TE3 N型热电材料 热电性能 

分 类 号：O48[理学—固体物理]