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作 者:邱华 贾利军[1] 沈琦杭 解飞[1] 张怀武[1] QIU Hua;JIA Li-jun;SHEN Qi-hang;XIE Fei;ZHANG Huai-wu(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)
机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
出 处:《磁性材料及器件》2020年第2期1-5,共5页Journal of Magnetic Materials and Devices
摘 要:采用固相反应法制备了以V-Bi置换Ti4+的LiZnTi铁氧体,获得较低的铁磁共振线宽和矫顽力,同时还保证其具有较高的饱和磁化强度、剩磁比和烧结密度。利用X射线衍射仪和扫描电子显微镜(SEM)等分析了在880℃和900℃烧结温度下,V-Bi二元取代对LiZnTi铁氧体的微观结构和电磁性能的影响。研究结果表明,其微观形貌与V-Bi取代量密切相关,适量的V-Bi取代可改善材料的微观结构,但过量的V-Bi会阻碍晶粒的生长。随着V-Bi取代量的增加,样品的饱和磁化强度Bs、剩磁比先增大后减小,铁磁共振线宽ΔH、矫顽力Hc先减小后逐渐增大。V-Bi substitution Ti of LiZnTi ferrites were prepared by conventional ceramic method in this paper.The LiZnTi ferrites with V-Bi substitution have low ferromagnetic resonance(FMR)linewidth(ΔH),microwave dielectric loss(tanδε),coercivity(Hc)and high saturation magnetization(Bs),remanence ratio,and sintered density.The effects of V-Bi binary substitution on the microstructures and magnetic properties of LiZnTi ferrites sintered at 880℃or 900℃were studied by X-ray diffraction(XRD),scanning electron microscopy(SEM)and so on.The results show that the micro-morphology was closely related to the content of V-Bi.The micro-structure of samples could be improved by appropriate V-Bi content,but excessive V-Bi would hinder the growth of grains and deteriorate the micro-morphology of samples.With the increase of V-Bi substitution,the saturation magnetization Bs and remanence ratio of the sample first increase and then decrease,while the ferromagnetic resonance linewidth(ΔH),coercivity(Hc)decrease first and then increase gradually.
关 键 词:LiZnTi铁氧体 V-Bi取代 磁性能 微结构
分 类 号:TM277.1[一般工业技术—材料科学与工程]
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