碳化硅陶瓷材料烧结技术的研究与应用进展  被引量:33

Research and Application of Sintering Technologies for SiC Ceramic Materials:A review

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作  者:李辰冉 谢志鹏 赵林 LI Chenran;XIE Zhipeng;ZHAO Lin(School of Materials Science and Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333403,Jiangxi,China;State Key Lab of New Ceramics and Fine Processing,Department of Materials Science and Engineering,Tsinghua University,Beijing 100084,China)

机构地区:[1]景德镇陶瓷大学材料科学与工程学院,江西景德镇333403 [2]清华大学材料学院新型陶瓷与精细工艺国家重点实验室,北京100084

出  处:《陶瓷学报》2020年第2期137-149,共13页Journal of Ceramics

基  金:国家自然科事基金(51427802,51672147,51662017)。

摘  要:碳化硅陶瓷材料具有优异的高温力学性能、热学性能以及化学稳定性,在化工、冶金、机械、能源、环保等工业领域以及半导体、光电子等现代科技领域得到了广泛应用。本文从SiC晶体结构特征及粉体烧结特性入手,详细论述了碳化硅陶瓷的重要烧结工艺的研究进展,既包括主流的反应烧结、无压烧结、热压烧结、热等静压烧结,又包括最新发展起来的放电等离子烧结和振荡压力烧结技术,并着重介绍了各项烧结技术的烧结特性、烧结机理、材料与产品性能等方面,最后对碳化硅陶瓷材料的发展进行了展望。Silicon carbide(SiC)ceramic materials have excellent high-temperature mechanical properties,high thermal properties and chemical stability.They have been widely used in various industrial fields,such as chemical,metallurgy,machinery,energy and environmental protection.They also found applications in modem scientific and optoelectronic fields,such as semiconductors and electronics.Starting from the structural characteristics of SiC crystals and sintering characteristics of powder,this paper is aimed to summarize the research progress of important sintering technologies for SiC ceramics,including both the widely used methods(such as reactive bonding sintering,pressureless sintering,hot-pressing sintering,hot isostatic sintering)and the recently developed methods(such as spark plasma sintering and oscillating pressure sintering).The sintering characteristics,sintering mechanism,materials and productivity of these sintering technologies are emphatically described.Finally,the development trend of SiC ceramics is prospected.

关 键 词:碳化硅陶瓷 烧结技术 烧结机理 产品性能 

分 类 号:TQ174.75[化学工程—陶瓷工业]

 

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