SiC MOSFET驱动电路设计及特性分析  

Driving Circuit Design and Performance Analysis for SiC MOSFET

作　　者：徐建清 高勇[1,2] 杨媛[2] 孟昭亮[1] 文阳[2] 张乐 Xu Jianqing;Gao Yong;Yang Yuan;Meng Zhaoliang;Wen Yang;Zhang Le(School of Electronic Information,Xi'an Polytechnic University,Xi'an 710000,China;School of Automation and Information Engineering,Xi'an University of Technology,Xi'an 710000,China)

机构地区：[1]西安工程大学电子信息学院,西安710000 [2]西安理工大学自动化与信息工程学院,西安710000

出　　处：《半导体技术》2020年第5期352-358,408,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51477138)。

摘　　要：近年来基于SiC和GaN的宽禁带半导体器件开始逐渐替代传统的Si IGBT器件,而面对高的开关速度所带来的问题,宽禁带半导体器件的开关特性分析以及驱动电路的设计在系统可靠运行方面显得尤为重要。以SiC MOSFET模块C2M0280120D为例设计了一款驱动电路,并在双脉冲测试平台对驱动电路进行了验证,同时分析了不同栅极驱动电阻对SiC MOSFET开关特性的影响。比较了传统Si器件和SiC宽禁带半导体器件在静态特性和开关特性上的差异,以分析SiC MOSFET驱动与传统Si IGBT驱动的区别。最后验证了所设计的驱动电路能保证驱动速度和栅极电压需求,并通过栅极电阻改变开关特性。In recent years, wide bandgap semiconductor devices based on SiC and GaN has substituted the Si IGBT devices gradually. However, facing the problems caused by high-frequency switching speed, the analysis of the switching characteristics of wide bandgap semiconductor devices and the design of the driving circuit are especially important in the reliable operation of the system. Taking the SiC MOSFET module C2 M0280120 D as an example, a driving circuit was designed, and the driving circuit was verified on the double pulse test platform. Meanwhile, the influence of different gate driving resistances on the switching characteristics of the SiC MOSFET was analyzed. The differences in the static characteristics and the switching characteristics between the conventional Si devices and SiC wide bandgap semiconductor devices were compared to analyze the differences between the new SiC MOSFET driver and traditional Si IGBT driver. Finally, it is verified that the driving circuit can guarantee the driving speed and gate voltage demand, and change the switching characteristics through gate resistance.

关 键 词：SiC MOSFET IGBT 驱动电路 栅极驱动电阻 双脉冲测试 

分 类 号：TN386[电子电信—物理电子学]