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作 者:李聪 刘自成 安建 LI Cong;LIU Zi-cheng;AN Jian(School of Information and Electronics,Beijing Institute of Technology,Beijing 100081,China;Beijing BiTMicro Technology Co.Beijing 100081,China;People's Liberation Army 32039 units,Beijing 102300,China;Engineering Research Center for Software Testing and Evaluation of Fujian Province,Xiamen 361024,China)
机构地区:[1]北京理工大学信息与电子学院,北京100081 [2]北京理工微电科技有限公司,北京100081 [3]中国人民解放军32039部队,北京102300 [4]福建省软件评测工程技术研究中心,福建厦门361024
出 处:《微电子学与计算机》2020年第5期54-57,63,共5页Microelectronics & Computer
基 金:国家自然科学基金(61301006,61801027)。
摘 要:基于90 nm CMOS工艺,设计实现了一种谐振频率为26 GHz的低噪声宽调谐范围的LC压控振荡器.分析了相邻MOM电容间的寄生电容并计入整体电容阵列当中,提高了谐振网络的品质因数,同时缩减了面积.分析了压控振荡器的相位噪声,采用了大尺寸尾电流管并覆盖大面积偏置滤波网络结构对相位噪声进行优化.经过测试验证,压控振荡器的谐振频率范围为24.2~29.6 GHz.当谐振频率为26 GHz时,在1 MHz频偏处相位噪声为-97.4 dBc/Hz,电路功耗为9.6 mW,FoMT值为-182.5.Based on the 90 nm CMOS process, a low noise wide tuning range LC voltage controlled oscillator with a resonant frequency of 26 GHz is designed. The parasitic capacitance between adjacent MOM capacitors is analyzed and included in the overall capacitor array, which improves the quality factor of the resonant network and reduces the area. The phase noise of the voltage controlled oscillator is analyzed, and it was optimized by using a large-sized tail current transistor and covering a large area bias filter network structure. The test results showed that the oscillation frequency covered 24.2~29.6 GHz, the phase noise reached-97.4 dBc/Hz at 1 MHz offset from a 26 GHz carrier with a power consumption of 9.6 mW, and the FOMT value of-182.5 dBc/Hz.
分 类 号:TN432[电子电信—微电子学与固体电子学]
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