CIGSeS薄膜太阳电池的H2S硫化研究  

STUDY OF CIGSeS THIN FILM SOLAR CELLS IN H2S SULFURZATION PROCESS

作　　者：王宪[1,2] 韩安军 韦小庆[1,2] 孟凡英[1] 刘正新 Wang Xian;Han Anjun;Wei Xiaoqing;Meng Fanying;Liu Zhengxin(Research Center for New Energy Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences(CAS),Shanghai 201800,China;University of Chinese Academy of Science,Beijing 100049,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所新能源技术中心,上海201800 [2]中国科学院大学,北京100049

出　　处：《太阳能学报》2020年第4期37-43,共7页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(61204005);上海张江国家自主创新示范区专项发展资金(ZJ2015-ZD-001)。

摘　　要：采用H2S硫化的方法制备铜铟镓硒硫(Cu(In1-xGax)(Se1-ySy)2,CIGSeS)吸收层,研究硫化温度和时间对CIGSeS吸收层和电池性能的影响。结果表明,550~580℃硫化处理时,电池的开路电压得到有效提升,但硫化温度为600℃时,薄膜表面出现局部开裂现象,电池短路电流和效率严重下降。硫化处理可促进铜铟镓硒(Cu(In1-xGax)Se2,CIGSe)吸收层内Ga元素向表面扩散,Ga和S的共同作用可有效提高吸收层表面带隙和太阳电池的开路电压。最终,采用580℃硫化30 min条件下制备的太阳电池开路电压比硫化处理前提高约80 mV,填充因子提高约5%,最高效率为13.69%,有效面积效率为14.62%。而采用580℃硫化10 min后再降温硫化20 min的变温硫化工艺不仅可减少热预算,而且可制备出同580℃恒温硫化30 min时转换效率相当的太阳电池。The CIGSeS((Cu(In1-xGax)(Se1-ySy)2)absorbers were prepared in H2S sulfurization process,the effect of the sulfurization temperature and time on the absorbers and the performance of the devices was studied.The results show that the open voltage of CIGSeS solar cells is increased effectively after sulfurization from 550 to 580℃.While local cracking of the films is founded on the surface,and the short circuit current and efficiency of solar cells is increased seriously when the sulfurization temperature reaches to 600℃.The sulfurization process promotes the diffusion of Ga to the surface of CIGSe absorber layer,then the band gap of absorber surface and open-circuit voltage of the solar cell are improved with the effect of S and Ga.As a result,after sulfurization at 580℃ for 30 min,the open-circuit voltage of the solar cell is about 80 mV higher than that without sulfurization,the fill factor increases by about 5%,the highest efficiency reaches 13.69%and the active area efficiency reaches 14.62%.In addition,the process with sulfurization at 580℃ for 10 min and then sulfurization for 20 min with the decreasing of temperature has a lower thermal budget,and the highest efficiency of the solar cell prepared by this process is close to the solar cell which fabricated with sulfurization at 580℃ for 30 min.

关 键 词：CIGSeS H2S 硫化 薄膜 太阳电池 开路电压 

分 类 号：TM914.42[电气工程—电力电子与电力传动]