传导电磁干扰对绝缘衬底上硅工艺器件的影响研究  

Study on the Influence of Conducted Electromagnetic Interference on Devices of Silicon on Insulated Process

作　　者：李向前 王蒙军 吴建飞 李尔平 李彬鸿 郝宁[4] 高见头[4] LI Xiangqian;WANG Mengjun;WU Jianfei;LI Erping;LI Binhong;HAO Ning;GAO Jiantou(School of Electronics and Information Engineering,Hebei University of Technology,Tianjin,300401,CHN;Tianjin Binhai Civil⁃military Integrated Innovation Institute,Tianjin,300459,CHN;College of Electronic Science,National University of Defense Technology,Changsha,410073,CHN;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing,100029,CHN)

机构地区：[1]河北工业大学电子信息工程学院,天津300401 [2]天津市滨海新区军民融合创新研究院,天津300459 [3]国防科技大学电子科学学院,长沙410073 [4]中国科学院微电子研究所,北京100029

出　　处：《固体电子学研究与进展》2020年第2期149-153,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61671200);河北省高等学校高层次人才科学研究项目(GCC2014011);河北省自然科学基金重点资助项目(F2017202283)。

摘　　要：为了研究绝缘衬底上硅(SOI)工艺器件在传导干扰下的电磁抗扰度特性,分别选用了SOI CMOS工艺和体硅CMOS工艺的CAN控制器,基于直接功率注入法对芯片进行了抗扰度测试,结果表明SOI芯片与体硅芯片的抗扰度阈值曲线的变化趋势基本相同,但在个别引脚和频段内SOI芯片具有更强的抗干扰能力。在不同工作温度下进行了抗扰度测试,结果表明SOI芯片在高温环境下具有较强的抗干扰能力。To study the electromagnetic immunity characteristics of SOI devices under conducted interference,the CAN controllers of SOI CMOS process and bulk silicon CMOS process were selected respectively.The immunity of chips was tested based on direct power injection method.The results show that the variation trend of the immunity threshold curves of SOI chip and bulk silicon chip is basically the same,but SOI chip has stronger anti-interference ability in individual pins and frequency bands.The immunity test was carried out at different working temperatures.The test results show that the SOI chip has strong anti-interference ability in high temperature environment.

关 键 词：电磁兼容 电磁抗扰度 绝缘衬底上硅 CAN控制器 

分 类 号：TN401[电子电信—微电子学与固体电子学]