非晶AlBN介质薄膜的制备及相关特性研究  

Preparation and relevant properties of amorphous AlBN dielectric films

作　　者：刘峰峰 李玉雄 隋展鹏 蔡勇[2] 张永红[3] 蒋春萍[2] LIU Feng-feng;LI Yu-xiong;SUI Zhan-peng;CAI Yong;ZHANG Yong-hong;JIANG Chun-ping(School of Nano-tech and Nano-bionics,University of Science and Technology of China,Hefei 230026,China;Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu,China;Vacuum Interconnected Nanotech Workstation,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu,China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123 [3]中国科学院苏州纳米技术与纳米仿生研究所纳米真空互联实验站,江苏苏州215123

出　　处：《材料工程》2020年第6期112-117,共6页Journal of Materials Engineering

基　　金：国家自然科学基金联合基金项目(U1830112);国家自然科学基金面上项目(61674163);江苏省重点项目(BE2018006-3)。

摘　　要：采用脉冲激光沉积(PLD)技术在GaN(002)上沉积非晶AlBN介质薄膜.利用X射线衍射技术(XRD)、透射电子显微镜(T EM)和X射线光电子能谱(XPS)等技术分别对介质薄膜的晶体结构、成分进行表征,并采用导电原子力显微镜(CAFM)以及I-V等测试手段对不同厚度薄膜的电学性质进行测试.结果表明:不同厚度的AlBN介质薄膜均为非晶,薄膜中B含量约为6.7%(原子分数).厚度为3 nm和18 nm的AlBN介质薄膜的表面粗糙度(Rq)分别为0.209 nm和0.116 nm,薄膜表面平整均匀,18 nm薄膜施加±10 V电压时,没有出现明显的漏电流.但在金属-介质-金属(M IM)结构中,18 nm薄膜结构中出现较大漏电流,漏电流密度在-2 V时约为-2×10^-4 A/cm^2.Amorphous AlBN dielectric films were deposited on GaN(002)by pulsed laser deposition(PLD).The crystal structure and composition of the grown films were characterized by X-ray diffraction(XRD),transmission electron microscopy(TEM)and X-ray photoelectron spectroscopy(XPS).Conductive atomic force microscope(CAFM)and I-V methods were also used to test the electrical properties of films with different thickness.The results show that the AlBN dielectric films with different thickness is amorphous,and the content of boron in all the films is about 6.7%(atom fraction).The root-mean-aquare(RMS)surface roughness Rq of the films with thickness of 3 nm and 18 nm are only 0.209 nm and 0.116 nm,respectively,indicating smooth surface of these AlBN film.When the voltage of±10 V is applied,there is no obvious leakage current in the film with a thicknes of 18 nm.However,in the metal-insulator-metal(MIM)structure,a large leakage current appears in the 18 nm thin film structure,and the leakage current density is about-2×10-^4 A/cm^2 at-2 V.

关 键 词：AlBN 脉冲激光沉积 非晶薄膜 

分 类 号：O484[理学—固体物理]