GaN基LED芯片电极结构的优化及制备  

Optimization and Preparation of GaN-Based LED Chip Electrode Structure

作　　者：晁鹏飞 许英朝 刘春辉[2] 吴天雨 李洋洋 刘建宁 Chao Pengfei;Xu Yingchao;Liu Chunhui;Wu Tianyu;Li Yangyang;Liu Jianning(School of Electrical Engineering and Automation,Xiamen University of Technology,Xiamen,Fujian 361024,China;School of Optoelectronics and Communication Engineering,Xiamen University of Technology,Xiamen,Fujian 361024,China;Fujian Key Laboratory of Optoelectronic Technology and Devices,Xiamen University of Technology,Xiamen,Fujian 361024,China)

机构地区：[1]厦门理工学院电气工程与自动化学院,福建厦门361024 [2]厦门理工学院光电与通信工程学院,福建厦门361024 [3]厦门理工学院福建省光电技术与器件重点实验室,福建厦门361024

出　　处：《激光与光电子学进展》2020年第7期276-282,共7页Laser & Optoelectronics Progress

基　　金：福建省教育厅中青年教师教育科研项目资助省属高校专项(JK2017036);福建省自然科学基金面上项目(2019J01876);厦门市科技计划项目(3502Z20183060);厦门市科技计划重大项目(3502ZCQ20191002)。

摘　　要：针对GaN基正装结构的LED芯片存在电流分布不均匀的问题,对传统的电极结构进行优化设计。通过建立有限元分析软件COMSOL的三维仿真模型,对传统结构和优化电极结构的芯片有源层电流分布进行了仿真,结果表明优化后的芯片电流分布更均匀。然后制备了不同结构的LED芯片进行光电性能测试,发现将N电极形状改变为扇形结构能提高LED的出光效率,在输入电流为20mA时,LED芯片的输出光功率为31.84mW,出光效率为52.03%,相比传统LED芯片出光效率提高了6.14%。Aiming at the problem of uneven current distribution in GaN-based LED chip,the traditional electrode structure is optimized.By establishing a three-dimensional simulation model based on finite element analysis software COMSOL,the current distribution in the active layer of chip electrode with optimized structure and traditional structure is simulated respectively.The results show that the current distribution in the chip with optimized structure is more uniform.Then,LED chips of various structures are prepared and tested for photoelectric performance.Experimental results show that changing the shape of the N electrode to a fan-shaped structure can improve the light output efficiency of the LED.When the input current is 20 mA,the output light power of the LED chip is 31.84 mW,and the light extraction efficiency is 52.03%,which is 6.14% higher than that of the conventional LED chip.

关 键 词：LED芯片 三维仿真模型 电极结构 出光效率 

分 类 号：TN383+.1[电子电信—物理电子学]