基于脉冲变压器隔离的MOSFET驱动电路的设计  

Design of MOSFET drive circuit based on pulse transformer isolation

作　　者：杨俊伟 翟娟 YANG Jun-wei;ZHAI Juan(Guangling College,Yangzhou University,Yangzhou 225009,China)

机构地区：[1]扬州大学广陵学院,江苏扬州225009

出　　处：《电子设计工程》2020年第12期188-193,共6页Electronic Design Engineering

摘　　要：MOSFET因为其控制方式较为简单,输入阻抗较高,噪声低,热稳定性好,寿命较长等优点,被广泛应用在中小功率和高频开关电路中。本文围绕其驱动电路展开研究,了解驱动电路的基本需求后,设计了一种利用脉冲变压器进行隔离的MOSFET驱动电路,给出驱动电路具体参数设计并进行了详细的阐述。最后在搭建实际模型电路并进行验证,实验数据进一步验证了整个驱动电路可满足预期指标,占空比可调节范围广,响应速度可达100kHz,且电路还具有隔离保护功能,因此在工业生产中有一定的实际意义。MOSFET has many advantages such as low noise,good thermal stability,high impedance and long life,so it is used very widely in small and medium sized power application system and high frequency switching circuits.This paper studies MOSFET drive circuit and analyzes the basic requirement of its driving circuit,the MOSFET drive circuit based on pulse transformer isolation is designed and the details of the driving circuit are given.Finally,the actual model circuit is built and verified.The experimental data verify that the whole drive circuit can meet the expected index,the duty cycle can be adjusted in a wide range,the response speed can be up to 100kHz,and the circuit has the function of isolation and protection,so it has certain practical significance in industrial production.

关 键 词：MOSFET管 隔离驱动电路 脉冲变压器隔离 参数设计 

分 类 号：TN78[电子电信—电路与系统]