Pr^3+掺杂对CaBi8Ti7O27陶瓷电学和光学性能的影响  

Effect of Pr^3+Doping on Electrical and Photoluminescence Properties of CaBi8Ti7O27 Ceramics

作　　者：龙梅 江向平[1] 樊刚 刘芳 苏春阳 苏雷 LONG Mei;JIANG Xiangping;FAN Gang;LIU Fang;SU Chunyang;SU Lei(School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, China;College of Electrical & Information Engineering, Southwest Minzu University, Chengdu 610041, China)

机构地区：[1]景德镇陶瓷大学材料科学与工程学院,景德镇333403 [2]西南民族大学电气信息工程学院,成都610041

出　　处：《硅酸盐通报》2020年第5期1594-1599,1607,共7页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(51762024,51562014,51862016,51602135);江西省自然科学基金(20171BAB216012);江西省教育厅科技项目(GJJ170789,GJJ170804,GJJ180718,GJJ170794);西南民族大学中央高校基本科研业务费专项资金项目(2019NQN06)。

摘　　要：采用传统固相法合成了Pr3+掺杂的CaBi8Ti7O27(CBT-BIT-xPr3+,0≤x≤0.020)共生铋层状结构多功能陶瓷材料,并研究了Pr3+掺杂对CaBi8Ti7O27陶瓷样品的结构、电学和光学性能的影响。结果表明,所有样品均为单一的正交相共生铋层状结构,适量的Pr3+掺杂未明显改变陶瓷样品的居里温度;随着Pr3+掺杂量的增大,陶瓷样品的介电损耗tanδ逐渐降低,压电常数d33由7 pC/N逐渐提升至11 pC/N;在450 nm波长光源的激发下,Pr3+掺杂后的样品可在611 nm处观测到一个较强的红光发射峰,并且其荧光强度随Pr3+掺杂量的增加而逐渐增强。Inter-growth bismuth layer-structured multifunctional ceramic materials of Pr3+doped CaBi8Ti7O27(CBT-BIT-xPr3+,0≤x≤0.020)were synthesized by solid-state reaction method.The effect of Pr3+doping on structure,electrical and photoluminescence properties of CaBi8Ti7O27 ceramics was systemically investigated.The results show that all the samples possess a single orthorhombic inter-growth bismuth layer-structure.The Curie temperature(TC)of CBT-BIT-xPr3+ceramic samples is not significantly dependent on the content of Pr3+.With the increase of Pr3+doping content,the piezoelectric constant d33 increases from 7 pC/N to 11 pC/N and the dielectric loss tanδdecreases gradually.Moreover,a strong red emission peak can be observed at 611 nm for Pr3+doped ceramic samples under the 450 nm excitation,and the photoluminescence intensity increases with the increase of Pr3+doping content.

关 键 词：压电陶瓷 共生铋层状结构 电学性能 光学性能 

分 类 号：TQ174.75[化学工程—陶瓷工业]