Scanning tunneling spectroscopic study of monolayer 1T-TaS2 and 1T-TaSe2  

作　　者：Haicheng Lin Wantong Huang Kun Zhao Shuang Qiao Zheng Liu Jian Wu Xi Chen Shuai-Hua Ji 

机构地区：[1]State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics,Tsinghua University,Beijing,100084,China [2]Institute for Advanced Studies,Tsinghua University,Beijing,100084,China

出　　处：《Nano Research》2020年第1期133-137,共5页纳米研究（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.11874233,11622433,and 11574175);the Ministry of Science and Technology of China(Nos.2016YFA0301002 and 2018YFA0305603).

摘　　要：The isostructural and isoelectronic transition-metal-dichalcogenides 1T-TaS2 and 1T-TaSe2 are layered materials with intricate electronic structures.Combining the molecular beam epitaxy growth,scanning tunneling microscopy measurements and first-principles calculations,we prepare monolayer 1T-TaS2 and TaSe2 and explore their electronic structures at the atomic scale.Both two-dimensional(2D)compounds exhibit commensurate charge density wave phase at low temperature.The conductance mapping identifies the contributions from different Ta atoms to the local density of states with spatial and energy resolution.Both 1T-TaS2 and 1T-TaSe2 monolayer are shown to be insulators,while the former has a Mott gap and the latter is a regular band insulator.

关 键 词：MONOLAYER 1T-TaS2 1T-TaSe2 commensurate charge density wave(CCDW) Mott gap band insulator 

分 类 号：TB33[一般工业技术—材料科学与工程]