Current improvement in substrate structured Sb2S3 solar cells with MoSe2 interlayer  

作　　者：Lu Liu Sheng-Li Zhang Jian-Yu Wu Wei-Huang Wang Wei Liu Li Wu Yi Zhang 刘璐;张生利;吴建宇;王伟煌;刘玮;武莉;张毅(Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology,Nankai University,Tianjin 300350,China;School of Physical Science,Nankai University,Tianjin 300071,China)

机构地区：[1]Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology,Nankai University,Tianjin 300350,China [2]School of Physical Science,Nankai University,Tianjin 300071,China

出　　处：《Chinese Physics B》2020年第5期579-585,共7页中国物理B（英文版）

基　　金：Project supported by the National Key R&D Program of China(Grant Nos.2019YFB1503500,2018YFE0203400,and 2018YFB1500200);the National Natural Science Foundation of China(Grant No.U1902218);the YangFan Innovative and Entrepreneurial Research Team Project of China(Grant No.2014YT02N037);the 111 Project,China(Grant No.B16027).

摘　　要：Sb2S3 solar cells with substrate structure usually suffer from pretty low short circuit current(JSC)due to the defects and poor carrier transport.The Sb2S3,as a one-dimensional material,exhibits orientation-dependent carrier transport property.In this work,a thin MoSe2 layer is directly synthesized on the Mo substrate followed by depositing the Sb2S3 thin film.The x-ray diffraction(XRD)patterns confirm that a thin MoSe2 layer can improve the crystallization of the Sb2S3 film and induce(hk1)orientations,which can provide more carrier transport channels.Kelvin probe force microscopy(KPFM)results suggest that this modified Sb2S3 film has a benign surface with less defects and dangling bonds.The variation of the surface potential of Sb2S3 indicates a much more efficient carrier separation.Consequently,the power conversion efficiency(PCE)of the substrate structured Sb2S3 thin film solar cell is improved from 1.36%to 1.86%,which is the best efficiency of the substrate structured Sb2S3 thin film solar cell,and JSC significantly increases to 13.6 mA/cm^2.According to the external quantum efficiency(EQE)and C-V measurements,the modified crystallization and elevated built-in electric field are the main causes.

关 键 词：Sb2S3 thin film super thin MoSe2 built-in electric filed Kelvin probe force microscopy 

分 类 号：TM914.4[电气工程—电力电子与电力传动]