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作 者:董亚莉 MURODBEK KODIROV 毛君 章佳艳 DONG Ya-li;MURODBEK KODIROV;MAO Jun;ZHANG Jia-yan(Department of Chemistry and Chemical Engeering,Shaoxing University,Zhejiang Shaoxing 312000,China)
机构地区:[1]绍兴文理学院化学化工学院,浙江绍兴312000
出 处:《广州化工》2020年第11期22-24,共3页GuangZhou Chemical Industry
摘 要:光催化技术因其广泛应用于析氢反应、降解水中污染物、CO2还原反应等,因而在解决能源短缺和环境污染问题上有突出贡献。NiO是典型的p型半导体,但因其禁带宽度大,光生电子与空穴对易复合,阻碍了其在光催化领域的应用。通过与n型半导体复合及元素掺杂的方法可以解决上述问题,基于此,综述了NiO的制备以及光催化的研究进展。Photocatalytic technology has made outstanding contributions to solving problems such as energy shortage and environmental pollution due to its wide application in hydrogen evolution reactions,degradation of pollutants in water,and CO2 reduction reactions.NiO is a typical p-type semiconductor.But the large band gap and the easy recombination of photo-generated electrons and holes for NiO hinder its application in the field of photocatalysis.The above problems can be solved by the combination with n-type semiconductors and element doping.Based on the above analysis,the preparation methods of NiO and photocatalytic applications of nickel oxide were summarized.
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