Atomic Mixing Induced by Ion Irradiation of V/Cu Multilayers  

作　　者：Yan-Bin Sheng Hong-Peng Zhang Tie-Long Shen Kong-Fang Wei Long Kang Rui Liu Tong-Min Zhang Bing-Sheng Li 盛彦斌;张宏鹏;申铁龙;魏孔芳;康龙;刘瑞;张桐民;李炳生(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000;Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031;State Key Laboratory for Environment-Friendly Energy Materials,Southwest University of Science and Technology,Mianyang 621010)

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000 [2]Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031 [3]State Key Laboratory for Environment-Friendlv Energy AIaterials,Southwest University of Science and Technology,Mianyang 621010

出　　处：《Chinese Physics Letters》2020年第3期36-40,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant No.U1832133)。

摘　　要：Bulk Cu/V multilayers simultaneously possess high strength and excellent radiation resistance thanks to their high density of interfaces.Irradiation-induced atomic mixing of Cu/V multilayers has been less investigated.Here,we investigate the ion irradiation of bulk Cu/V multilayers exposed to H2^+ or He^+ ions at 350℃.The microstructure and elemental distribution are investigated by transmission electron microscopy and energy dispersive x-ray spectroscopy.Facetted bubbles and atomic mixing are observed after ion irradiation.The possible mechanisms of irradiation-induced atomic mixing are discussed.

关 键 词：spectroscopy. MICROSTRUCTURE RESISTANCE 

分 类 号：TL34[核科学技术—核技术及应用]