Growth Control of High-Performance In As/Ga Sb Type-Ⅱ Superlattices via Optimizing the In/Ga Beam-Equivalent Pressure Ratio  

作　　者：Da-Hong Su Yun Xu Wen-Xin Wang Guo-Feng Song 苏大鸿;徐云;王文新;宋国峰(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049;Beijing Key Laboratory of Inorganic Stretchable and Flexible Information Technology,Beijing 100083;Institute of Physics,Chinese Academy of Sciences,Beijing 100190)

机构地区：[1]Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049 [3]Beijing Key Laboratory of Inorganic Stretchable and Flexible Information Technology,Beijing 100083 [4]Institute of Physics,Chinese Academy of Sciences,Beijing 100190

出　　处：《Chinese Physics Letters》2020年第3期60-63,共4页中国物理快报（英文版）

基　　金：Supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0402402 and2016YFB0400601);the National Basic Research Program of China(Grant No.2015CB351902);the National Science and Technology Major Project(2018ZX01005101-010);the National Natural Science Foundation of China(Grant Nos.61835011 and U1431231);the Key Research Projects of the Frontier Science of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC004);the Beijing Science and Technology Projects(Grant No.Z151100001615042)。

摘　　要：The performance of type-Ⅱ superlattice(T2 SL) long-wavelength infrared devices is limited by crystalline quality of T2 SLs. We optimize the process of growing molecular beam epitaxy deposition T2 SL epi-layers on Ga Sb(100)to improve the material properties. Samples with identical structure but diverse In/Ga beam-equivalent pressure(BEP) ratio are studied by various methods, including high-resolution x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy. We find that appropriately increasing the In/Ga BEP ratio contributes to improving the quality of T2 SLs, but too large In BEP will much more easily cause a local strain,which can lead to more In Sb islands in the In Sb interfaces. The In Sb islands melt in the In Sb interfaces caused by the change of chemical potential of In atoms may result in the "nail" defects covering the whole T2 SLs, especially the interfaces of Ga Sb-on-In As. When the In/Ga BEP ratio is about 1, the T2 SL material possesses a lower full width at half maximum of +1 first-order satellite peak, much smoother surface and excellently larger area uniformity.

关 键 词：properties. BEAM identical 

分 类 号：O782[理学—晶体学] TN362[电子电信—物理电子学]