MBE Growth and Characterization of Strained Hg Te(111)Films on CdTe/GaAs  

作　　者：Jian Zliang Shengxi Zhang Xiaofang Qiu Yan Wu Qiang Sun Jin Zou Tianxin Li Pingping Chen 张健;张圣熙;邱小芳;巫艳;孙强;邹进;李天信;陈平平(State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083;University of Chinese Academy of Sciences,Beijing 100049;Materials Engineering,The University of Queensland,Brisbane,Queensland 4072,A ustralia;Centre for Microscopy and Microanalysis,The University of Queensland.Brisbane,Queensland 4072,Australia)

机构地区：[1]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083 [2]University of Chinese Academy of Sciences,Beijing 100049 [3]Materials Engineering,The University of Queensland,Brisbane,Queensland 4072,A ustralia [4]Centre for Microscopy and Microanalysis,The University of Queensland.Brisbane,Queensland 4072,Australia

出　　处：《Chinese Physics Letters》2020年第3期64-68,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.11634009,61874069,1177041280 and 11574336);Shanghai Science and Technology Foundation(Grant No.18JC1420401)。

摘　　要：Strained Hg Te thin films are typical three-dimensional topological insulator materials.Most works have focused on Hg Te(100)films due to the topological properties resulting from uniaxial strain.In this study,strained Hg Te(111)thin films are grown on Ga As(100)substrates with Cd Te(111)buffer layers using molecular beam epitaxy(MBE).The optimal growth conditions for Hg Te films are determined to be a growth temperature of 160℃and an Hg/Te flux ratio of 200.The strains of Hg Te films with different thicknesses are investigated by highresolution x-ray diffraction,including reciprocal space mapping measurements.The critical thickness of Hg Te(111)film on Cd Te/Ga As is estimated to be approximately 284 nm by Matthews'equations,consistent with the experimental results.Reflection high-energy electron diffraction and high-resolution transmission electron microscopy investigations indicate that high-quality Hg Te films are obtained.This exploration of the MBE growth of Hg Te(111)films provides valuable information for further studies of Hg Te-based topological insulators.

关 键 词：MBE FILMS INSULATOR 

分 类 号：TB383.2[一般工业技术—材料科学与工程]