检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:He-Nan Fang Yuan-Yuan Zhong Ming-Wen Xiao Xuan Zang Zhi-Kuo Tao 方贺男;仲元园;肖明文;臧璇;陶志阔(College of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023;Department of Physics,Nanjing University,Nanjing 210093)
机构地区:[1]College of Electronic and Optical Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023 [2]Department of Physics,Nanjing University,Nanjing 210093
出 处:《Chinese Physics Letters》2020年第3期86-89,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China under Grant Nos.11704197 and 61574079;the NUPTSF under Grant No.NY217046。
摘 要:A spintronic theory is developed to study the effect of lattice distortion on the magnetic tunnel junctions(MTJs)consisting of single-crystal barrier and half-metallic electrodes.In the theory,the lattice distortion is described by strain,defect concentration and recovery temperature.All three parameters will modify the periodic scattering potential,and further alter the tunneling magnetoresistance(TMR).The theoretical results show that:(1)the TMR oscillates with all the three parameters;(2)the strain can change the TMR about 30%;(3)the defect concentration will strongly modify the periodic scattering potential,and further change the TMR about 50%;and(4)the recovery temperature has little effect on the periodic scattering potential,and only can change the TMR about 10%.The present work may provide a theoretical foundation to the application of lattice distortion for MTJs consisting of single-crystal barrier and half-metallic electrodes.
关 键 词:temperature. DISTORTION EFFECT
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.7