Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width  

作　　者：Chong-Biao Luan Hong-Tao Li 栾崇彪;李洪涛(Key Laboratory of Pulsed Power,Institute of Fluid Physics,China Academy of Engineering Physics,P.O.Box 919-108,Mianyang 621900)

机构地区：[1]Key Laboratory of Pulsed Power,Institute of Fluid Physics,China Academy of Engineering Physics,P.O.Box 919-108,Mianyang 621900

出　　处：《Chinese Physics Letters》2020年第4期49-52,共4页中国物理快报（英文版）

基　　金：Supported by the Rector’s Fund of China Academy of Engineering Physics(Grant No.YZJJLX2016002);the National Natural Science Foundation of China(Grant Nos.61504127 and U1530128).

摘　　要：We demonstrate that the transport of hot carriers may result in the phenomenon where an oscillated output current appears at the waveforms in a high-power photoconductive semiconductor switch(PCSS) working at long pulse width when the laser disappears or the electric field changes. The variational laser and electric field will affect the scattering rates of hot carriers and crystal lattice in high-power PCSS, and the drift velocity of hot carriers and also the on-state resistance will be changed. The present result is important for reducing the on-state resistance and improving the output characteristics of high-power Si/Ga As PCSS.

关 键 词：SCATTERING CONDUCTIVE RESISTANCE 

分 类 号：TN303[电子电信—物理电子学]