基于聚碳硅烷直接固化的2D C/SiC复合材料粘接方法与室温粘接性能  

Study on the Bonding Method and Room Temperature Bonding Performance of 2D C/SiC Composite based on Direct Curing of Polycarbosilane

作　　者：李旭勤 刘小龙 李向辉 张毅 LI Xuqin;LIU Xiaolong;LI Xianghui;ZHANG Yi(School of Materials and Environmental Engineering,Chengdu Technological University,Chengdu 611730,China;Science and Technology on Thermostructural Composite Materials Laboratory,Northwestern Polytechnical University,Xi an 710072,China)

机构地区：[1]成都工业学院材料与环境工程学院,成都611730 [2]西北工业大学超高温结构复合材料重点实验室,西安710072

出　　处：《成都工业学院学报》2020年第2期15-19,共5页Journal of Chengdu Technological University

基　　金：国家自然科学基金青年基金(51802263)。

摘　　要：为了研究2D C/SiC复合材料的可粘接性,采用聚碳硅烷(PCS)作为粘接剂,经室温固化直接粘接2D C/SiC复合材料。通过测试2D C/SiC连接板在粘接前后的三点弯性能,研究2D C/SiC复合材料的粘接效率,并采用有限元仿真模拟2D C/SiC粘接层的受力状态,揭示其内应力分布。结果表明,PCS可用作2D C/SiC复合材料的室温粘接剂,2D C/SiC粘接件表现出与2D C/SiC复合材料相似的弯曲行为,其平均弯曲强度为126.46±23.95 MPa,粘接效率为41.62%。有限元计算表明,在理想状况下,板以及粘接层能保持为一个整体,不开裂,强度最高,粘接效果最好;当粘接层的材料属性离样板的材料属性越来越远时,两者受力不一致,最终导致开裂,粘接效果差。In order to study the bondability of 2D C/SiC composites,polycarbosilane(PCS)was used as a binder to directly bond 2D C/SiC composites at room temperature.By testing the three-point bending performance of 2D C/SiC connecting plates before and after bonding,the bonding efficiency of 2D C/SiC composites was studied.The stress state of 2D C/SiC bonding layer was simulated by finite element simulation,revealing internal stress distribution.The results show that PCS can be used as a room temperature adhesive for 2D C/SiC composites.The 2D C/SiC adhesive joints exhibit similar bending behavior as 2D C/SiC composites,with an average bending strength of 126.46±23.95 MPa.The bonding efficiency was 41.62%.The finite element calculation shows that under ideal conditions,the plate and the bonding layer can be kept as a whole without cracking,the strength and the bonding effect is best;when the material properties of the bonding layer are far away from the template,the two forces are inconsistent,which eventually leading to cracking and poor bonding effect.

关 键 词：2D C/SiC 连接 强度 有限元仿真 

分 类 号：TB332[一般工业技术—材料科学与工程]