碲属线性巨磁阻材料研究进展  

An Overview on Linear Giant Magnetoresistance Materials of Telluride

作　　者：曹明星 马立文[1,2] 席晓丽[1,2] 王志宏[1,2] CAO Mingxing;Ma Liwen;XI Xiaoli;WANG Zhihong(National Engineering Laboratory for Industrial Big-data Application Technology,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Advanced Functional Materials,Education Ministry of China,College of Materials Science and Engineering,Beijing University of Techno-logy,Beijing 100124,China)

机构地区：[1]北京工业大学,工业大数据应用技术国家工程实验室,北京100124 [2]北京工业大学材料科学与工程学院,教育部先进功能材料重点实验室,北京100124

出　　处：《材料导报》2020年第13期13131-13138,共8页Materials Reports

基　　金：国家自然科学基金(51621003);国家重点研发计划(2017YFB0305800);北京市教委科学技术项目(KM201810005009);北京市自然科学基金(2172010);国家工业大数据应用技术工程实验室建设项目(312000522303)。

摘　　要：近年来,具有巨磁阻性质的材料,因其电阻随施加的磁场而显著变化,是现代电子设备中的关键材料。巨磁电阻碲化物由于具有无法预见的大的非饱和磁阻、超高迁移率以及反常霍尔效应等特性,可以用于强磁场探测、信息记录领域以及磁阻器件等(例如计算机的硬盘驱动器),有着重要的科学意义和广阔的应用前景。具有准二维特征、非平庸拓扑能带结构的金属碲属化合物,以及一维碲属银化物作为非饱和线性巨磁阻重要材料体系,表现出了优异的性质,被研究者重视。然而,目前该类材料仍存在一些问题,主要体现在:(1)合成方面。目前还未实现大规模生产高质量的大面积薄层、块体材料,这限制了其开发和应用。(2)性能与结构方面。巨磁阻、热电性能、压致超导、低能光吸收等优良特性已有研究,而通过掺杂等方法调节载流子浓度以提高巨磁阻性能还未被分析透彻。近年来,研究者主要从亟待解决的制备和性能问题展开研究,取得了重大进展。通过采用自上而下的技术已经证明以低成本制备层状材料是可能的,而自下而上的制备技术目前应用较广,例如化学气相沉积、助熔剂法等一系列方法,可以制备具有少量缺陷的高质量材料。磁电阻性能方面,碲属线性巨磁阻材料具有的各向异性磁电阻强烈依赖于角度和温度,当磁场、电场与晶轴取向不同时,磁电阻数值方面有很大区别,该类材料在低温0.53 K、高磁场60 T条件下,具有高至1300000%的磁电阻。相结构方面,过渡金属碲属化合物在2H相或者T、T′和Td畸变中是较稳定的,并可以诱导可逆相变。低能电子结构方面,费米面附近的电子-空穴口袋的尺寸和数量实现完美补偿,可成为巨磁阻效应特征出现的原因。本文以二维MoTe 2、WTe 2和一维Ag 2Te材料为代表,综述了近年来碲属线性巨磁阻材料的化学制备方法,以及性能与结�In recent years,the resistance of materials with large magnetoresistance varies significantly with the applied magnetic field,which is a key factor in modern electronic equipment.Giant magnetoresistance telluride has unpredictable large unsaturated magnetoresistance and ultra-high migration.Characteristics such as rate and anomalous Hall effect can be used in strong magnetic field detection,information recording,and magnetoresistive devices,such as hard disk drives in computers,which have important scientific significance and broad application prospects.The metal tellurium compound with quasi-two-dimensional features,non-planar topological band structure,and the one-dimensional tellurium silver compound as an important material of the unsaturated linear giant magnetoresistive material system have been paid attention to by researc-hers.However,at present,there are still some problems in the material,mainly reflected in:(ⅰ)synthesis.At present,large-scale production of high-quality large-area thin-layer and bulk materials has not been realized,which limits its development and application.(ⅱ)Performance and structure.Excellent properties such as giant magnetoresistance,thermoelectric properties,pressure-induced superconductivity,and low-energy light absorption have been studied.However,the carrier concentration is adjusted by doping and the like to improve the giant magnetoresistance performance has not been thoroughly analyzed.In recent years,researchers have made significant progress in research and preparation of performance problems that have to be solved.It has been proven by the use of top-down techniques that it is possible to produce layered materials at low cost,while bottom-up techniques are currently widely used,such as chemical vapor deposition,flux method and other methods,which can be prepared with high-quality materials with few defects.In terms of magnetoresistance performance,the anisotropic magnetoresistance of tellurium linear giant magnetoresistive materials strongly depends on the angle and

关 键 词：外尔半金属 二碲化钨 相变 二维材料 线性巨磁阻 

分 类 号：TB34[一般工业技术—材料科学与工程]