单晶硅制绒过程研究  

INFLUENCE OF TEXTURING ADDITIVES FOR C-Si TEXTURE

作　　者：吴闯 黄志平 陈剑辉[1] 麦耀华[1] 陈静伟[1] Wu Chuang;Huang Zhiping;Chen Jianhui;Mai Yaohua;Chen Jingwei(College of Physics&Technology,Hebei University,Baoding 071002,China)

机构地区：[1]河北大学物理科学与技术学院,保定071002

出　　处：《太阳能学报》2020年第5期345-350,共6页Acta Energiae Solaris Sinica

摘　　要：晶体硅表面制绒能够减少光的反射和提高太阳电池效率。传统的抛光单晶硅制绒过程包括成核、生长、成型和过腐蚀过程。使用添加剂的碱溶液对抛光单晶硅片和金刚线切割单晶硅片进行研究发现,经过线切割的单晶硅片表面有约5μm厚的损伤层,损伤层包括多晶碎晶区、裂纹区、过渡区和弹性畸变区4个区域,厚度分别为0.5、1.4、1.4和1.7μm;当制绒时间从4.5 min变化至8.5 min,多晶碎晶区被完全刻蚀,12.5 min时金字塔基本布满硅片表面,21 min时形成2~3μm的均匀金字塔。与传统制绒过程相比,抛光单晶硅片制绒具有统一的成核、生长、成型过程,而过腐蚀过程被均匀过程替代,并能够获得2~3μm均匀的金字塔形貌和11%的低反射率。Texturing of c-Si wafer can reduce the reflectance and increase the efficiency of solar cells. The process for traditional polished c-Si wafer texturing is followed by the nucleation,growth,shaping and over etching process. Currently,alkali solution with additives is widely used in c-Si production lines for texturing,while the wafer is sawed by stainless diamond saw resulting in a tiny saw mark. The wafer used in production has the damage layer on the surface with the thickness of 5 microns and this damaged layer can be defined of 0.5 μm thick polycrystalline crushed zone,1.4 μm thick crack area,1.4 μm thick transition area and 1.7 μm thick elastic distortion zone,respectively. The texturing process are studied both on diamond sawed wafer and polished wafer by an alkali solution with additives. It is found that the texturing processes of these two kinds of wafers are different from the reported polished wafers’. For diamond sawed wafer,when the polycrystalline crushed zone is fully etched during the etching time of 4.5 to 8.5 min,the pyramids is appeared followed the distributing to the whole surface in 12.5 min,and became uniform in size of 2-3 micros in 21 min. On the contrast,the polished wafer has the process of the nucleation,growth and shaping process,while the over etching process is replaced by a uniform process,which has a good uniformity of pyramid size of 2-3 μm and lower reflectance of 11%.

关 键 词：制绒 金刚线 单晶硅 表面损伤 反射率 

分 类 号：TM914[电气工程—电力电子与电力传动]