A CMOS Compatible Si Template with (111) Facets for Direct Epitaxial Growth of Ⅲ–Ⅴ Materials  

作　　者：Wen-Qi Wei Jian-Huan Wang Jie-Yin Zhang Qi Feng Zihao Wang Hong-Xing Xu Ting Wang Jian-Jun Zhang 韦文奇;王建桓;张结印;冯琦;王子昊;徐红星;王霆;张建军(Wuhan University School of Physics and Technology,Wuhan University,Wuhan 430072;Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190;College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049;Songshan Lake Materials Laboratory,Dongguan 523808)

机构地区：[1]Wuhan University School of Physics and Technology,Wuhan University,Wuhan 430072 [2]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190 [3]College of Materials Science and Opto-electronic Technology,University of Chinese Academy of Sciences,Beijing 100049 [4]Songshan Lake Materials Laboratory,Dongguan 523808

出　　处：《Chinese Physics Letters》2020年第2期30-34,共5页中国物理快报（英文版）

基　　金：the National Natural Science Foundation of China under Grant Nos.61635011,61975230,61804177,11434041 and 11574356;the National Key Research and Development Program of China(2016YFA0300600 and 2016YFA0301700);the Key Research Program of Frontier Sciences,CAS(No.QYZDB-SSW-JSC009);Ting Wang is supported by the Youth Innovation Promotion Association of CAS(No.2018011).

摘　　要：Ⅲ-Ⅴ quantum dot(QD) lasers monolithically grown on CMOS-compatible Si substrates are considered as essential components for integrated silicon photonic circuits.However,epitaxial growth of Ⅲ-Ⅴ materials on Si substrates encounters three obstacles:mismatch defects,antiphase boundaries(APBs),and thermal cracks.We study the evolution of the structures on U-shaped trench-patterned Si(001) substrates with various trench orientations by homoepitaxy and the subsequent heteroepitaxial growth of GaAs film.The results show that the formation of(111)-faceted hollow structures on patterned Si(001) substrates with trenches oriented along [110] direction can effectively reduce the defect density and thermal stress in the GaAs/Si epilayers.The(111)-faceted silicon hollow structure can act as a promising platform for the direct growth of Ⅲ-Ⅴ materials for silicon based optoelectronic applications.

关 键 词：III–V TRENCH OPTOELECTRONIC 

分 类 号：TN304.054[电子电信—物理电子学]