稀土离子掺杂钒酸铋纳米晶的制备、晶体结构特征及光谱性质  

Preparation,Crystal Structure and Spectral Properties of Bismuth Vanadate Nanocrystals Doped with Rare Earth Ions

作　　者：廖蕊 黄鹤燕 李园利 潘小琴 郭宝刚 李同彩 张行泉 刘海峰 谢瑞士 LIAO Rui;HUANG Heyan;LI Yuanli;PAN Xiaoqin;GUO Baogang;LI Tongcai;ZHANG Xingquan;LIU Haifeng;XIE Ruishi(School of Life Science and Engineering,Fundamental Science on Nuclear Wastes and Environmental Safety Laboratory,Analytical and Testing Center,Southwest University of Science and Technology,Mianyang 621010,Sichuan,China)

机构地区：[1]西南科技大学生命科学与工程学院,核废物与环境安全国防重点学科实验室,分析测试中心,四川绵阳621010

出　　处：《硅酸盐学报》2020年第5期739-744,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51502249);西南科技大学科研项目(17LZX543、18LZX524);西南科技大学大学生创新基金项目(CX19-013)。

摘　　要：采用化学溶液法合成了不同稀土离子(Nd3+、Y3+、Eu3+)掺杂的BiVO4纳米晶。利用X射线衍射分析、扫描电子显微分析、能量色散X射线光谱、Fourier红外光谱、Raman光谱、紫外‒可见光漫反射光谱以及荧光光谱研究了样品的物相、晶体结构、成分、形貌、局部结构、表面化学和光谱性质。结果表明:不同离子掺杂的BiVO4样品尺寸处于纳米尺度,不同离子掺杂的BiVO4纳米晶具有四方相晶体结构,这些纳米晶呈现出清晰的轮廓及规则的形貌,表明得到的纳米晶具有较好的结晶性能,且表现出一定程度的晶格畸变。在247、367、763、855 cm−1附近出现的掺杂BiVO4纳米晶的拉曼峰,与四方相BiVO4结构的振动频率相吻合。紫外‒可见光漫反射光谱表明,随着掺杂离子的引入,BiVO4纳米晶样品内部电子结构发生了变化,BiVO4、Eu:BiVO4、Y:BiVO4和Nd:BiVO4纳米晶的禁带宽度,分别为2.50、2.74、2.90、2.94 eV,说明通过掺杂不同离子可以调控半导体纳米晶的禁带宽度。光致发光谱表明,Eu:BiVO4纳米晶的发光峰具有最低的强度,说明Eu:BiVO4纳米晶具有最低的电子空穴复合效率,暗示该纳米晶具有较高的光催化活性。Y:BiVO4纳米晶的发光峰强度最高,表明该半导体纳米晶的电子空穴复合效率最高。Different rare earth ions(i.e.,Nd3+,Y3+,Eu3+)doped BiVO4 nanocrystals were synthesized by a chemical protocol method.The phase composition,crystal structure,morphology,local structure,surface chemistry and spectral properties of the nanocrystal samples were investigated by X-ray diffraction,scanning electron microscopy,energy dispersive X-ray spectroscopy,Fourier transform infrared spectroscopy,Raman spectroscopy,ultraviolet-visible diffusion reflective spectroscopy and photoluminescence spectroscopy.The results show that the sizes of different ion-doped BiVO4 crystals are in nanoscale,the BiVO4 nanocrystals doped with different ions have a tetragonal crystal structure.and the obtained nanocrystals have regular morphologies and clear profiles,indicating that the obtained nanocrystals have a good crystallization performance and exhibit a certain degree of lattice distortion.Raman peaks of doped BiVO4 nanocrystals appear at about 247,367,763 and 855 cm−1,which are consistent with the characteristic vibration frequencies of BiVO4 structure with tetragonal phase.UV-visible diffuse reflectance spectrum shows that the internal electronic structure of the BiVO4 nanocrystals changes after doping ions,the band gap energies of BiVO4,Eu:BiVO4,Y:BiVO4 and Nd:BiVO4 nanocrystal are 2.50,2.74,2.90 and 2.94 eV,respectively,indicating that doping different ions could regulate the band gap of the semiconductor nanocrystals.Based on the results by photoluminescence spectroscopy,the minimum luminescence intensity of Eu:BiVO4 nanocrystals is obtained,showing the minimum electron hole recombination efficiency,which is suggested that the Eu:BiVO4 nanocrystals has higher photocatalytic activity.The maximum luminescence intensity of Y:BiVO4 nanocrystal is obtained,thus having the maximum electron hole recombination efficiency.

关 键 词：化学溶液法 钒酸铋 掺杂纳米晶 晶体结构 光谱性质 稀土离子 

分 类 号：O649.1[理学—物理化学] O433.4[理学—化学]