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作 者:刘帅[1]
出 处:《科技创新与应用》2020年第20期9-11,13,共4页Technology Innovation and Application
基 金:北京市教育委员会科技计划重点项目(编号:KZ201810011013)。
摘 要:利用磁控溅射的方法制备了以Au为隔离层,分别以Co/Pt多层膜为参考层和自由层的具有垂直磁各向异性的赝自旋阀结构Pt(50?)/[Co(4?)/Pt(6?)]3/Co(4?)/Au(30?)/[Co(4?)/Pt(20?)]4。通过磁性测量发现自旋阀具有非常好的垂直磁各向异性,通过对自旋阀进行输运性质测量得到了1.7%的磁电阻值。实验还发现,当增加中间Au隔离层厚度时,自旋阀的磁电阻值会单调减小。Pseudo spin valve with perpendicular magnetic anisotropy has been fabricated by magnetron sputtering technique.Au layer is adopted as spacer layer and Co/Pt multilayers are adopted as reference and free layers in the pseudo-spin valve.The resulting spin valve stack is Pt(50 A)/[Co(4 A)/Pt(6 A)]3/Co(4 A)/Au(30 A)/[Co(4 A)/Pt(20 A)]4.The spin valve exhibits strong perpendicular magnetic anisotropy as indicated by magnetization measurements.The perpendicular giant magnetoresistance ratio of 1.7%is achieved by transport measurements.It is found that the magnetoresistance ratio of the spin valve drops monotonically as Au layer thickness increases.
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