纳米Cu/SiO2薄膜制备及其性能  

Preparation and Properties of Cu/SiO 2 Thin Films

作　　者：张明朝 陈卫东[1] 李玲[1] ZHANG Mingchao;CHEN Weidong;LI Ling(College of Physics&Electronic Engineering,Sichuan Normal University,Chengdu 610101,Sichuan)

机构地区：[1]四川师范大学物理与电子工程学院,四川成都610101

出　　处：《四川师范大学学报（自然科学版）》2020年第4期521-527,共7页Journal of Sichuan Normal University（Natural Science）

基　　金：四川省教育厅重点项目(16ZA0047)。

摘　　要：采用热蒸发在载玻片和SiO2衬底上沉积约5. 12 nm的Cu薄膜,再用退火炉分别进行100、200、300、400和500℃等5个温度退火,得到不同温度下的纳米Cu薄膜.用原子力显微镜和紫外-可见分光光度计研究不同退火温度对纳米Cu薄膜表面形貌、粒子分布和光学性质的影响.实验结果表明:当纳米Cu薄膜在载玻片上生长Cu颗粒阵列时,需要将退火温度控制在200℃左右;若使纳米Cu薄膜在SiO2薄膜表面也能生长Cu颗粒阵列,退火温度比没有沉积SiO2薄膜的衬底高100℃,此时纳米Cu颗粒对应方均根粗糙度为7. 20 nm、峰高(Skewness)为1. 75,以及偏态(Kurtosis)为5. 67,仅透射率略低9%.这样的Cu颗粒阵列更利于做超结构薄膜与完美吸收的顶层纳米金属颗粒.当退火温度为500℃时,载玻片上生长Cu薄膜的透射率出现一个相对稳定的波段,该工艺条件制备出来的纳米Cu薄膜,可以用来制作一些微型芯片,而SiO2薄膜表面生长使纳米Cu薄膜对应方均根粗糙度为6. 25 nm、峰高为0. 57,以及偏态为2. 66.这样的Cu颗粒阵列不仅能够做大频率光电波吸收,还可以用作全固态电池中电解质上层的导电层.In this paper,the fixed thickness 5.12 nm of all the Cu thin films were fabricated on glass slides and SiO 2 substrates by using thermal evaporation method,then annealed at 100,200,300,400 and 500℃,respectively.The effect of the annealing temperature on the surface morphology,conductivity and crystal structure of Cu thin films was successively investigated by AFM(atomic force microscopy)and UV-Vis spectrophotometry.The experimental results indicate that the annealing temperature needs to be controlled to about 200℃when the NPA(nanoscale particle array)of Cu thin films are grown on the slide glass.If the NPA of Cu thin films can also be grown on the surface of the SiO 2 film,the annealing temperature is 100℃higher than the sample that the sample substrate without SiO 2 film deposited.At this time,the NCP(nano copper particles)have a RMS(root mean square)surface roughness of 7.20 nm,a Skewness of 1.75 and a Kurtosis of 5.67.The transmittance alone is slightly lower by 9%.Such a NPA is more conducive to superstructure thin films and perfectly absorbing top layer NMP(nano metal particles).The transmittance of the Cu film grown on the slide glass appears a relatively stable wavelength band,when the annealing temperature is 500℃.The NCF(nano copper film)prepared by the process conditions can be used to make some microchips.The surface growth of SiO 2 film made the NCF with a RMS of 6.25 nm,a Skewness of 0.57,and a Kurtosis of 2.66.Such a NPA can not only absorb light waves at large frequencies,but also can be used as electrolyte upper layers in all-solid-state batteries of the conductive layer.

关 键 词：Cu薄膜阵列 方均根粗糙度 退火温度 透射率 

分 类 号：TG156[金属学及工艺—热处理]