Si衬底上NiCo2O4薄膜的外延生长和电学性质  

Epitaxial Growth and Electrical Properties of the NiCo2O4Film on Si Substrate

作　　者：甄聪棉[1,2] 郭文哲[1,2] 刘璐[1,2] 田之雪 侯登录[1,2] ZHEN Congmian;GUO Wenzhe;LIU Lu;TIAN Zhixue;HOU Denglu(College of Physics,Hebei Normal University,Hebei Shijiazhuang 050024,China;Hebei Advanced Thin Film Laboratory,Hebei Shijiazhuang 050024,China)

机构地区：[1]河北师范大学物理学院,河北石家庄050024 [2]河北省新型薄膜材料实验室,河北石家庄050024

出　　处：《河北师范大学学报（自然科学版）》2020年第4期302-307,共6页Journal of Hebei Normal University：Natural Science

基　　金：国家自然科学基金(51971087);河北省自然科学基金(A2018205144);河北省高等学校自然科学重点项目(ZD2017041)。

摘　　要：改变沉积温度,在Si(100)衬底上制备了NiCo2O4外延薄膜,探究其结构和电学性质的变化.研究发现,衬底对薄膜有压应力作用,晶体结构产生压缩效果,使样品导电性增强;变程和近程跃迁在整个测试温区同时作用,低温以变程跃迁为主,高温以近程跃迁为主.NiCo2O4epitaxial thin films were prepared on Si(100)substrate by changing the growth temperature(tg).The changes of structure and electrical properties of the NiCo2O4films were investigated.The substrate imposes compressive stress on the thin film,which makes the conductivity of the film enhance.It was found that the variable-range hopping(VRH)and nearest-neighbour hopping(NNH)mechanisms simultaneously are on action in the whole measurement temperature range.The VRH played an important role at low temperature,while the NNH dominated at celectrical transport high temperature.

关 键 词：NiCo2O4 外延薄膜 导电机制 变程跃迁 近程跃迁 

分 类 号：O469[理学—凝聚态物理]