NiCo2O4外延薄膜的制备及其结构依赖的电输运性能  

Growth and Structural Effect on the Electrical Transport of Epitaxial NiCo2O4Thin Film

作　　者：张晓哲 甄聪棉[2] 黄岩 ZHANG Xiaozhe;ZHEN Congmian;HUANG Yan(School of Materials Science and Engineering,Xi′an Polytechnic University,Shaanxi Xi′an 710048,China;College of Physics,Hebei Normal University,Hebei Shijiazhuang 050024,China;School of Sciences,Xi′an Technological University,Shaanxi Xi′an 710021,China)

机构地区：[1]西安工程大学材料工程学院,陕西西安710048 [2]河北师范大学物理学院,河北石家庄050024 [3]西安工业大学理学院,陕西西安710021

出　　处：《河北师范大学学报（自然科学版）》2020年第4期308-314,共7页Journal of Hebei Normal University：Natural Science

基　　金：西安工程大学博士科研启动基金(310/107020488);西安工业大学博士科研启动基金(0853-302020527)。

摘　　要：采用脉冲激光沉积技术在不同衬底材料上沉积了NiCo2O4(111)外延薄膜,分别利用反射式高能电子衍射、X线衍射及原子力显微镜表征了NiCo2O4外延薄膜的晶体结构和表面特征,测试了2种不同衬底材料上NiCo2O4外延薄膜的电输运性质,分析了薄膜的电输运有效激活能与温度的关系.研究发现,2种不同衬底上NiCo2O4外延薄膜的电输运性质具有完全不同的特征,且均表现出好的导电性.所得研究结果可以为NiCo2O4薄膜在自旋电子器件中的应用提供重要的实验指导和现实参考.The rich physical and chemical properties of NiCo2O4have attracted a lot of attention all over the world,but its intrinsic electrical and magnetic properties and its application in spintronic devices are not well established,and the further studies are needed to address these questions.In this paper,it was used pulsed laser deposition to deposit epitaxial NiCo2O4(111)thin film on different substrates,and reflection high-energy electron diffraction,X-ray diffraction,and atomic force microscopy are employed to characterize the structure and surface features of NiCo2O4epitaxial films.The electrical transport properties of NiCo2O4 epitaxial films on different substrates were investigated,and the relationship between the effective activation energy and temperature was analyzed.The study has found that the electrical transport properties of NiCo2O4epitaxial films on different substrates possessed completely different features,while all of these NiCo2O4thin films have very excellent electrical conductivity.This study will provide important experimental guidance and practical references for the application of NiCo2O4films in spintronic devices.

关 键 词：NiCo2O4 外延生长 薄膜 电输运 

分 类 号：O484.1[理学—固体物理] O484.3[理学—物理]