Ho:Sc2SiO5可饱和吸收体被动Q开关Tm:YAlO3激光器  

Ho:Sc2SiO5 Saturable Absorber Passively Q-switched Tm:YAlO3 Laser

作　　者：白冰 祝贝贝 张斌[1] 薛喻宸 杨晓涛[2] 李立[1] BAI Bing;ZHU Bei-bei;ZHANG Bin;XUE Yu-chen;YANG Xiao-tao;LI Li(School of Physics and Optoelectronic Engineering,Harbin Engineering University,Harbin 150001,China;School of Power and Energy Engineering,Harbin Engineering University,Harbin 150001,China)

机构地区：[1]哈尔滨工程大学物理与光电工程学院、纤维集成光学教育部重点实验室,黑龙江哈尔滨150001 [2]哈尔滨工程大学动力与能源工程学院,黑龙江哈尔滨150001

出　　处：《聊城大学学报（自然科学版）》2020年第5期38-43,65,共7页Journal of Liaocheng University:Natural Science Edition

基　　金：国家自然科学基金项目(61875043)资助。

摘　　要：报道Ho:Sc2SiO5(Ho:SSO)晶体作为一种新型可饱和吸收体用于被动Q开关Tm:YAlO3(Tm:YAP)固体激光器.在793 nm激光二极管端面泵浦下,Ho:SSO被动Q开关Tm:YAP激光器产生稳定的微秒脉冲输出,发射激光波长为1.88μm.实验获得了130 mW的最大平均功率和5.2μJ的单脉冲能量输出,脉冲宽度为1.87μs,重复频率为25 kHz.通过引入声光调制器,设计搭建了基于Ho:SSO晶体混合调Q的Tm:YAP激光器,有效压缩了脉冲宽度至百纳秒量级.实验获得了最小213 ns的脉冲宽度,且在4 kHz重复频率下最大单脉冲能量达到34μJ,这项工作表明了新型Ho:SSO晶体作为1.9 m波段可饱和吸收体的实际应用潜力.Ho:Sc2SiO 5(Ho:SSO)crystal as a new saturable absorber was firstly exploited in the passively Q-switched operation of Tm:YAlO 3(Tm:YAP)laser.Under end pumping of 793 nm laser diode,Ho:SSO passively Q-switched Tm:YAP laser can generate robust microsecond pulse output at 1.88μm wavelength.The 130 mW of average output power and 5.2μJ of pulse energy were obtained with the pulse duration of 1.87μs and repetition rate of 25 kHz.Further by incorporating an acousto-optic(AO)modulator,Ho:SSO-based hybrid Q-switched Tm:YAP laser was designed to compress pulse duration at hundreds of nanoseconds.The minimum pulse duration of 213 ns was achieved with the maximum pulse energy of 34μJ at 4 kHz repetition rate.This work suggests an important application potential of Ho:SSO crystal as saturable absorber at 1.9μm region.

关 键 词：Ho:SSO晶体 TM:YAP激光器 被动Q开关 混合调Q 

分 类 号：TN2[电子电信—物理电子学]