High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical oxidation  

原位化学氧化构建高性能MoS2-MoO3面内同质异质结光敏晶体管

作　　者：Kaixi Bi Qiang Wan Zhiwen Shu Gonglei Shao Yuanyuan Jin Mengjian Zhu Jun Lin Huawei Liu Huaizhi Liu Yiqin Chen Song Liu Huigao Duan 毕开西;万强;舒志文;邵功磊;靳媛媛;朱梦剑;林均;刘华伟;刘怀志;陈艺勤;刘松;段辉高(College of Mechanical and Vehicle Engineering,State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body,Hunan University,Changsha 410082,China;School of Physics and Electronics,Hunan University,Changsha 410082,China;Institute of Chemical Biology and Nanomedicine(ICBN),State Key Laboratory of Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082,China;College of Science,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]College of Mechanical and Vehicle Engineering,State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body,Hunan University,Changsha 410082,China [2]School of Physics and Electronics,Hunan University,Changsha 410082,China [3]Institute of Chemical Biology and Nanomedicine(ICBN),State Key Laboratory of Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082,China [4]College of Science,National University of Defense Technology,Changsha 410073,China

出　　处：《Science China Materials》2020年第6期1076-1084,共9页中国科学（材料科学（英文版）

基　　金：We gratefully acknowledge the financial support from the National Natural Science Foundation of China(51722503,51621004,21705036 and 21975067);the Natural Science Foundation of Hunan Province,China(2018JJ3035).

摘　　要：Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrated circuit and optoelectronic devices.Hence,a controlled and facile method to achieve p-n interface is desired.Molybdenum sulfide(MoS2)has shown promising potential as an atomic-layer ntype semiconductor in electronics and optoelectronics.Here,we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process.The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior,with a maximum external quantum efficiency of^650%,~3.6 mA W-1 at 0 V,and a light switching ratio of^102.The importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent mapping.Due to the high photoresponse at low source-drain voltage(VDS)and gate voltage(VG),the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits.Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics,optoelectronics and CMOS logic circuits.由组成相同的材料构建具有清晰边界的平面内p-n异质结是二维晶体管研究面临的主要挑战之一,在下一代集成电路和光电器件领域具有重要的潜在应用.因此有必要开发一种可实现p-n界面的简便、可控的操作方法.硫化钼(MoS2)作为一种具有原子层厚度的n型半导体材料已经在电子学和光电子学领域展现出巨大的应用前景.在本研究中,我们通过KI/I2溶液化学氧化诱导方法实现了从n型MoS2到p型MoO3的原位转化,进而形成了横向面内p-n异质结.MoS2/MoO3 p-n异质结显示出高效的光响应和整流特征,0 V、~3.6 mA W-1条件下最大外部量子产率达到~650%,同时光开关比达到~102.构筑的p-n异质结的高性能也被光电流面扫描所证实.由于器件在低源漏电压(VDS)和栅压(VG)条件下具有高的光响应性能,MoS2/MoO3 p-n二极管在光电器件及集成电路中的应用具有低功耗的特点.本研究为局部进行载流子种类转变提供了可能的途径,并将MoS2进一步应用于电子学、光电子学及CMOS逻辑电路领域.

关 键 词：molybdenum disulfide lateral p-n junction PHOTOCURRENT OPTOELECTRONICS 

分 类 号：TN32[电子电信—物理电子学] O614.612[理学—无机化学]