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作 者:Yuchen Liu Yu Zhou Dechang Jia Juanli Zhao Banghui Wang Yuanyuan Cui Qian Li Bin Liu
机构地区:[1]Institute for Advanced Ceramics,School of Materials Science and Engineering,Harbin Institute of Technology,Harbin,150080,China [2]School of Materials Science and Engineering,Shanghai University,Shanghai,200444,China
出 处:《Journal of Materials Science & Technology》2020年第7期212-219,共8页材料科学技术(英文版)
基 金:This work was supported financially by the National Natural Science Foundation of China(Nos.51602188 and 51972206);the Program for Professor of Special Appointment(Eastern Scholar)by Shanghai Municipal Education Commission(No.TP2015040);the Science and Technology Committee of Shanghai(No.19010500400).
摘 要:Perovskite stannates are promising semiconductors that are widely used in optoelectronic devices.Here,the composition dependent intrinsic point defects of stannate perovskites ASnO3(A=Ca,Sr,Ba)are studied by first-principles calculations.The preferences of defects under stoichiometric and nonstoichiometric conditions are unsealed,meanwhile the charge states of each intrinsic defect varying with the change of electron Fermi energy are clarified.For stoichiometric BaSnO3 and SrSnO3,the Schottky defect complexes are predicted as the most stable defect structure,while the antisite defect complexes are the most stable one in CaSnO3.In nonstoichiometric ASnO3,excessive AO is beneficial to the formation of oxygen vacancies and A-Sn antisite defects in all ASnO3;while the Ca interstitial is another major defect existing in CaSnO3.In the case of SnO2 excess,the predominant defects are the Sn-A antisite defects and A vacancies.Since the functionality of these perovskite oxides is closely related to the types and concentrations of their point defects,the present results are expected to guide the future experiments to optimize the function of the perovskite oxides by tailoring the intrinsic defects through controlling the composition of AO and SnO2.
关 键 词:DEFECT PEROVSKITE NONSTOICHIOMETRY Density functional theory
分 类 号:TB30[一般工业技术—材料科学与工程] TN15[电子电信—物理电子学]
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