基于PECVD的TSV深孔绝缘层沉积工艺优化  

Optimization of the TSV Deep Hole Insulation Layer Deposition Process Based on PECVD

作　　者：唐伟[1] 王文杰 吴道伟 李宝霞[2] 杜亚飞 赵鸿 Tang Wei;Wang Wenjie;Wu Daowei;Li Baoxia;Du Yafei;Zhao Hong(School of Mechanical Engineering,Xi'an University of Science and Technology,Xi'an 710054,China;Xi'an Microelectronic Technology Institute,Xi'an 710000,China)

机构地区：[1]西安科技大学机械工程学院,西安710054 [2]西安微电子技术研究所,西安710000

出　　处：《微纳电子技术》2020年第6期492-497,共6页Micronanoelectronic Technology

基　　金：国家重点研发计划资助项目(2017YFB1102900)。

摘　　要：研究了基于等离子体增强化学气相沉积(PECVD)法的硅通孔(TSV)中(孔径5μm,深宽比10∶1)二氧化硅(SiO2)薄膜的生长技术。分析了低频功率、腔室压力和分步沉积次数对TSV深孔SiO2膜层覆盖率的影响。实验结果表明,深孔内底部的膜层覆盖率最高,孔内拐角处的膜层覆盖率最低。在低频功率为300 W、腔室压力为1.6 Torr (1 Torr=133.3 Pa)、分步沉积8次时,孔内最薄处的拐角覆盖率由2.23%提高到了4.88%,有效提高了膜层的覆盖率。最后,对膜层的击穿电压、漏电流、表面应力和沉积速率进行了检测,结果表明在保证膜层电性能基础上,将深孔SiO2薄膜的沉积速率提高到了480.075 nm/min。The growth technology of silica(SiO2)films in through-silicon-via(TSV)with a diameter of 5μm and depth-to-width ratio of 10∶1 by plasma enhanced chemical vapor deposition(PECVD)method was studied.The influences of the low-frequency power,chamber pressure and step-by-step deposition times on the coverage rate of TSV deep hole SiO2 film were analyzed.The experimental results show that the film coverage rate of the bottom in the deep hole is the highest,the film coverage rate of the corner in the hole is the lowest.At the low-frequency power of 300 W,the chamber pressure of 1.6 Torr(1 Torr=133.3 Pa)and the step-by-step deposition times of 8,the film coverage rate of the thinnest corner in the hole increases from2.23%to 4.88%,and the film coverage rate is effectively enhanced.Finally,the breakdown voltage,leakage current,surface stress and deposition rate of the film were tested.The test results show that on the basis of guaranteeing the electrical properties of the film,the deposition rate of the SiO2 film in the deep hole reaches 480.075 nm/min.

关 键 词：等离子体增强化学气相沉积(PECVD) 硅通孔(TSV) 二氧化硅(SiO2) 覆盖率 沉积速率 

分 类 号：TN405.95[电子电信—微电子学与固体电子学]