氮化碳薄膜的光电特性研究  

Study on the Photoelectric Properties of N Doped CN Thin Films

作　　者：沈洪雪 李刚 姚婷婷 金葆琪 金克武 王天齐 SHEN Hong-xue;LI Gang;YAO Ting-ting;JIN Bao-qi;JIN Ke-wu;WANG Tian-qi(State Key Laboratory for Advanced Technology of Float Glass,Bengbu 233018,China;AnHui University of Finance&Economics,Bengbu 233018,China)

机构地区：[1]浮法玻璃新技术国家重点实验室,安徽蚌埠233018 [2]安徽财经大学,安徽蚌埠233018

出　　处：《真空》2020年第3期34-36,共3页Vacuum

基　　金：安徽省重点研究和开发计划项目(1804a09020061);安徽省科技重大专项(17030901085)。

摘　　要：以高纯石墨为靶材,Ar、N2为溅射和反应气体,采用直流磁控溅射法,制备了一系列不同N掺杂量的氮化碳薄膜。利用XRD、SEM、分光光度计、高阻抗率计等检测手段对薄膜的成分、形貌、透过率、电阻率等进行表征。结果表明:CN薄膜已初具晶型;随着溅射腔室中N2含量的增加,薄膜中N含量先增加后减少最后趋于稳定状态,薄膜的电阻率维持在(10-5~1015)Ω·cm范围内变动;透过率基本维持在85%~91%之间。N的掺入对薄膜中的sp3杂化C起到了稳定的作用。Using high purity graphite as target,Ar and N2 as sputtering and reacting gases,a series of CN thin films with different N content were prepared by DC magnetron sputtering. The composition,morphology,transmittance and electrical resistivity of the films were detected by means of XRD,SEM,spectrophotometer and high impedance meter. The results show that t he CN film has the first crystal shape,and with the increase of N2 content in the sputtering chamber,the content of N in the film increases first and then decreases finally to the stable state. The resistivity of the film is maintained within the range of 10-5Ω·cm to 1015Ω.cm and the transmittance is basically maintained between 85% and 91%. The incorporation of N played a stabilizing role in the sp3 hybrid C in the films.

关 键 词：sp3杂化 透过率 电阻率 晶型 

分 类 号：TQ174[化学工程—陶瓷工业] TB43[化学工程—硅酸盐工业]